Transit time parameter extraction for the HICUM bipolar compact model

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2001, Pages 106-109

  Ardouin, B ^a   Zimmer, T ^a   Berger, D ^a   Celi, D ^a   Mnif, H ^a   Burdeau, T ^a   Fouillat, P ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; TRANSIT TIME DEVICES;

BIPOLAR COMPACT MODELS;

BIPOLAR TRANSISTORS;

EID: 0035159018     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. An integral charge control model for bipolar transistors
2. T) falloff at high current densities
3. Physics-based minority charge and transit time modelling for bipolar transistors
4. BiCMOS6G: Ahigh Performance 0.35μm SiGe Technology for Wireless Applications