Ultra heat-shock resistant die attachment for silicon carbide with pure zinc

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1467-1469

  Suganuma, K ^a   Kim, S ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Die bonding; power semiconductor devices; silicon carbide; thermal shock

Indexed keywords

AIR TEMPERATURE; DIE ATTACHMENT; DIE BONDING; HEAT-SHOCK; HIGH-TEMPERATURE DEVICES; LEAD SOLDERS; NITRIDE COATING; POWER SEMICONDUCTOR DEVICES; PURE ZINC; SILICON-CARBIDE POWER DEVICES;

DIES; LEAD; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SILICON NITRIDE; SOLDERING; THERMAL SHOCK; ZINC; ZINC COATINGS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649451367     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2081338     Document Type: Article

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