Low-temperature-deposited SiO2 gate insulator with hydrophobic methyl groups for bottom-contact organic thin-film transistors

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1485-1487

  Fan, Ching Lin ^a   Chiu, Ping Cheng ^a   Lin, Chang Chih ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Methyl (CH3); organic thin film transistor (OTFT); SiO 2; tetraethoxysilane (TEOS)

Indexed keywords

BOTTOM-CONTACT ORGANIC THIN-FILM TRANSISTOR; CRYSTALLINE GROWTH; DEPOSITION METHODS; DEVICE PERFORMANCE; FLEXIBLE SUBSTRATE; GATE INSULATOR; HIGHER TEMPERATURES; LOW TEMPERATURES; METHYL (CH3); METHYL GROUP; ORGANIC THIN FILM TRANSISTORS; PENTACENE FILM; PLASMA CHEMICAL VAPOR DEPOSITION; POTENTIAL APPLICATIONS; SIO 2; TETRAETHOXYSILANES;

CHEMICAL SENSORS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; FUNCTIONAL GROUPS; HYDROPHOBICITY; PLASMA DEPOSITION; POLYMERS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 78649448157     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2080311     Document Type: Article

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