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2005 International Semiconductor Device Research Symposium
Volumn 2005, Issue , 2005, Pages 398-399
Effect of graded base doping on the gain of SiC BJT
Author keywords

[No Author keywords available]
Indexed keywords

EID: 33847228753     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)
References (3)
  • 1
    • 0042745643 scopus 로고    scopus 로고
    • A high current gain 4H-SiC NPN power bipolar junction transistor
    • J. Zhang, et. al, "A high current gain 4H-SiC NPN power bipolar junction transistor", IEEE Elctron Device Letters, 2003, p327
    • (2003) IEEE Elctron Device Letters , pp. 327
    • Zhang, J.1    et., al.2
  • 2
    • 7644241360 scopus 로고    scopus 로고
    • Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor
    • J. Zhang, et. al, "Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor", Electronics Letters, 2004, p. 1381
    • (2004) Electronics Letters , pp. 1381
    • Zhang, J.1    et., al.2
  • 3
    • 0041590941 scopus 로고    scopus 로고
    • High current gain 4H-SiC npn bipolar junction transistors
    • Chih-Fang Huang, et. al, "High current gain 4H-SiC npn bipolar junction transistors", IEEE Electron Device Letters, 2003, p. 396
    • (2003) IEEE Electron Device Letters , pp. 396
    • Huang, C.1    et., al.2

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.