Implantation-free 4H-SiC bipolar junction transistors with double base epilayers

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 471-473

  Zhang, Jianhui ^a   Li, Xueqing ^a   Alexandrov, Petre ^a   Burke, Terry ^b   Zhao, Jian H ^c  

^a UNITED SILICON CARBIDE INC   (United States)

^b U S ARMY TARDEC   (United States)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

Bipolar junction transistors (BJTs); Power transistors; Silicon carbide

Indexed keywords

ANNEALING; EPILAYERS; HARDNESS; HIGH TEMPERATURE APPLICATIONS; ION IMPLANTATION; SILICON CARBIDE;

CURRENT GAIN; POWER TRANSISTORS; VOLTAGE DRIFT;

BIPOLAR TRANSISTORS;

EID: 43549109467     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.920273     Document Type: Article

References (13)

1. M. Domeij, H.-S. Lee, E. Danielsson, C.-M. Zetterling, M. Ostling, and A. Schoner, "Geometrical effects in high current gain 1100-V 4H-SiC BJTs," IEEE Electron Device Lett., vol. 26, no. 10, pp. 743-745, Oct. 2005.
2. J. Zhang, Y. Luo, F. Alexandrov, L. Fursin, and J. H. Zhao, "A high current gain gain-SiC NPN power bipolar junction transistor," IEEE Electron Device Lett., vol. 24, no. 5, pp. 327-329, May 2003.
3. C-F. Huang and J. A. Cooper, Jr., "High current gain 4H-SiC NPN bipolar Junction transistor," IEEE electron Device Lett., vol. 24, no. 6, pp. 396-398, Jun. 2003.
4. S. Krishnaswami, A. Agarwal, S.-H. Ryu, C. Capell, J. Richmond, J. Palmour, S. Balachandran, T. P. Chow, S. Bayne, B. Geil, K. Jones, and C. Scozzie, "1000-V, 30-A 4H-SiC BJTs with high current gain," IEEE Electron Device Lett., vol. 26, no. 3, pp. 175-177, Mar. 2005.
5. A. K. Aggarwal, S. Krishnaswami, J. Richmond C Capell, S.-H. Ryu, J. W. Palmour, S. Balachandran, T. P. Chow, S. Bayne, B. Geil, C. Scozzie, and K. A. Jones, "Evolution of the 1600 V. 20 A, SiC bipolar junction transistor," in Proc. ISPSD, 2005, pp. 271-274.
6. 2," IEEE electron Device Lett., vol. 27, no. 5, pp.368-370, May 2006.
7. J. H. Zhao, J. Zhang, X. Li, and K. Sheng, "Effect of graded base doping on the gain of SiC BJT," in Proc. IEEE ISDRS, 2005, pp. 398-399.
8. j. Zhang, P. Alexandrov, and J. H. Zhao, " High power (500 V-70 A) and high gain (44-47) 4H-SiC bipolar junction transistors," Mater. Sci. Forum, vol. 457-460, pp. 1149-1152, 2004.
9. 2 4H-SiC BJTs," IEEE Electron Device Lett., vol. 26, no. 3, pp. 188-190, Mar. 2005.
10. 2 high power 4H-SiC bipolar junction transistor," Mater. Sci. Forum, vol. 527-529, pp. 1417-1420, 2005.
11. J. Zhang, J. H. Zhao, P. alexandrov, and T. Burke, "Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor," Electron. Lett. vol. 40, no. 21, pp. 1381-1382, Oct. 2004.
12. A. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, S.-H. Ryu, J. Palmour, K, Jones, and C. Scozzie, "Degradation of current gain in SiC BJTs," in Proc. Mater. Res. Soc. Symp., 2006, vol. 911, pp. 431-436.
13. Y. Gao, A. Q. Huang, Q. Zhang, S. Krishnaswami, and A. K. Agarwal, "Analysis of operational degradation of SiC BJT characteristics," in Proc. ISPSD, 2007, pp. 121-124.