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Volumn 108, Issue 9, 2010, Pages

Chemical interaction of B4 C, B, and C with Mo/Si layered structures

(9) De Rooij Lohmann, V I T A a Veldhuizen, L W a Zoethout, E a Yakshin, A E a Van De Kruijs, R W E a Thijsse, B J b Gorgoi, M c Schafers F c Bijkerk, F a,d

a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN (Netherlands)

b DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

c HAHN MEITNER INSTITUT (Germany)

d UNIVERSITY OF TWENTE (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; CHEMICAL INTERACTIONS; CHEMICAL PROCESS; DIFFUSION BARRIER LAYERS; EX SITU; EXTREME ULTRAVIOLET; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; IN-SITU; LAYERED STRUCTURES; MO/SI MULTILAYER; REFERENCE SYSTEMS; THERMAL STABILITY; TWO STAGE;

CHEMICAL ENGINEERING; DEPTH PROFILING; PHOTOELECTRICITY; PHOTONS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIFFUSION BARRIERS;

EID: 78649308165 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3503521 Document Type: Article

Times cited : (15)

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