First-principle study of Mg adsorption on Si(111) surfaces

Chinese Physics B

Volumn 18, Issue 1, 2009, Pages 275-281

  Ying, Min Ju ^a,b,c   Zhang, Ping ^d   Du, Xiao Long ^e  

^a BEIJING NORMAL UNIVERSITY   (China)

^b Beijing Radiation Center ^*  (China)

^c BEIJING RADIATION CENTER   (China)

^d INSTITUTE OF APPLIED PHYSICS AND COMPUTATIONAL MATHEMATICS   (China)

^e INSTITUTE OF PHYSICS   (China)

Author keywords

Electronic materials; Electronic structure

Indexed keywords

ADSORPTION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLID STATE PHYSICS;

ADSORPTION SITES; COVALENT BONDINGS; ELECTRONIC MATERIALS; FIRST-PRINCIPLE CALCULATIONS; FIRST-PRINCIPLE STUDIES; METALLIC FEATURES; SEMICONDUCTING SURFACES; SI (1 1 1);

SURFACES;

EID: 62649117714     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/1/044     Document Type: Article

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