Projected performance of inxGa1-x N-based multi-junction solar cells

Istanbul University - Journal of Electrical and Electronics Engineering

Volumn 6, Issue 2, 2006, Pages 251-255

  Islam, Md Rafiqul ^a   Enamul Kabir, A N M ^a   Bhuiyan, Ashraful G ^a  

^a KHULNA UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

Concentrator and efficiency; Multi junction

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ENERGY GAP; MATHEMATICAL MODELS; PHOTOCURRENTS; SEMICONDUCTOR JUNCTIONS;

CURRENT MISMATCH; PHOTOCURRENT DENSITY; SOLAR PHOTONS;

SOLAR CELLS;

EID: 33947207484     PISSN: 13030914     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. J. M. Olson, T. A. Gessert, and M. M. Al-Jasim, Proceedings 18th IEEE Photovoltaic Specialists Conference, 552, Las Vegas, Oct. 21-25, 1985 -IEEE, New York, 1985.
2. K. A. Bertness, S. R. Kurtz, D. J. Friedman, A. E. Kibbler, C. Kramer, and J. M. Olson, Appl. Phys. Lett. 65, 989, 1994.
3. M. Yamaguchi. "Free electron concentration and mobility of InN and In0.68Ga0.32N as a function of displacement damage dose measured by the Hall Effect." FIG. 6. Sol. Energy Mater. Sol. Cells 75, 261 2003.
4. C. H. Henry. "Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells," Journal of applied physics, 51(8) 4494-4499, August 1980.
5. 1-xN tandem PV structures," Solar Energy Materials & Solar Cells, vol. 87 pp. 595-603 Dec. 2005.
6. 1-xN," Phys. Status. Solid, (a) 195 (3) 628-633, 2003.
7. S. M. Sze, Physics of Semiconductor Device, Bell Laboratories, Incorporated Murray Hill, New Jersey, 1981.
8. X. Quo, E.F. Schubert, "Current crowding in GaN/InGaN light emitting diodes on insulating substrates," J. Appl. Phys. 90 (8) 4191-4195, 2001
9. R. Hickman, J.M. Van Hove, P.P. Chow, J.J. Klaassen, A.M. Wowchack, C.J. Polley, D.J. King, F. Ren, C.R. Abernathy, S.J. Pearton, K.B. Jung, H. Cho, J.R. La Roche, "GaN PN junction issues and developments, "Http://www.mse. ulf.edu/~spear/recent_papers/pn_junction/pn_junction.pdf, 01/04/2003
10. M. Hori, K.Kano, T. Yamaguchi, Y. Satto, T. Araki, Y. Nanishi, N. Teraguchi, and A. Suzuki, "Optical Properties of InxGa1-xN with entire alloy composition on InN buffer layer grown by RF-MBE," Phys. stat. sol. (b) 234, No. 3, 750-754, October, 2002.
11. M. E. Levinshtein et. al. Properties of advanced semiconductor materials, A wiley-interscience Publication, John wiley & sons, Inc, 2001.
12. http://rredc.nrel.gov/solar/spectra/aml.5/ on 25/05/06
13. O. Ambacher et. al. "Pyroelectric properties of Al (In) GaN/GaN hetero and quantum well structure" J. Phys. Condens Matter 14, 3399-3434, 2002.
14. M. Yaniaguichi et al.. "Japanese activities of R&Don III-V concentrator solar cells and modules", proc. 19th EU-PVSEC. 2004