Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

Applied Physics Letters

Volumn 97, Issue 18, 2010, Pages

  Koide, Hirotaka ^a   Nagao, Yuki ^a   Koumoto, Kunihito ^a   Takasaki, Yuka ^a   Umemura, Tomonari ^a   Kato, Takeharu ^b   Ikuhara, Yuichi ^b,c   Ohta, Hiromichi ^a,d  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN FINE CERAMICS CENTER   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; AMORPHOUS OXIDES; ELECTRIC FIELD MODULATION; ELECTRONIC DENSITY; GATE VOLTAGES; STATE OF THE ART; THERMOPOWERS; TRANSPARENT THIN FILM TRANSISTOR;

CONDUCTION BANDS; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONIC DENSITY OF STATES; THIN FILM TRANSISTORS; THIN FILMS;

AMORPHOUS FILMS;

EID: 78649259731     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3512870     Document Type: Article

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