Electronic and optical properties of La-aluminate dielectric thin films on Si (100)

Surface and Interface Analysis

Volumn 42, Issue 10-11, 2010, Pages 1566-1569

  Tahir, Dahlang ^a,e   Choi, Eun Hye ^a   Cho, Young Joon ^a   Oh, Suhk Kun ^a   Kang, Hee Jae ^a   Jin, Hua ^b   Heo, Sung ^c   Chung, Jae Gwan ^c   Lee, Jae Cheol ^c   Tougaard, Sven ^d  

^a Chungbuk National University   (South Korea)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d UNIVERSITY OF SOUTHERN DENMARK   (Denmark)

^e HASANUDDIN UNIVERSITY   (Indonesia)

Author keywords

Band gap; Optical properties; REELS

Indexed keywords

ATOMIC LAYER; BAND GAPS; DIELECTRIC FUNCTIONS; DIELECTRIC THIN FILMS; EXTINCTION COEFFICIENT (K); INDEX OF REFRACTION; QUANTITATIVE ANALYSIS; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPIES; SI(1 0 0);

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; DEPOSITION; ELECTRON ENERGY ANALYZERS; ENERGY DISSIPATION; ENERGY GAP; REELS; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; VAPOR DEPOSITION;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 78449289486     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3590     Document Type: Conference Paper

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