Real-time control of AlN incorporation in epitaxial Hf1- XAlxN using high-flux, low-energy (10-40 eV) ion bombardment during reactive magnetron sputter deposition from a Hf 0.7Al0.3alloy target

Acta Materialia

Volumn 59, Issue 2, 2011, Pages 421-428

  Howe, B M ^a   Sammann, E ^a   Wen, J G ^a   Spila, T ^a   Greene, J E ^a   Hultman, L ^b   Petrov, I ^a  

^a United States of America   (United States)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

HfAlN; Ion bombardment; Nanolayers; Sputter deposition; Transition metal nitrides

Indexed keywords

ALLOY TARGET; ALN; BACK-SCATTERED; FILM CHEMISTRY; FILM COMPOSITION; GROWING FILMS; HETEROSTRUCTURES; HFALN; HIGH DEPOSITION RATES; ION ENERGIES; LAYER COMPOSITION; LAYER THICKNESS; LOW ENERGIES; MAGNETRON SPUTTER DEPOSITION; METAL FLUXES; NANO LAYERS; ORDERS OF MAGNITUDE; RE-SPUTTERING; REACTION PATHWAYS; REACTIVE MAGNETRON SPUTTERING; SUPER-LATTICE STRUCTURES; SWITCHING PERIOD; TOTAL PRESSURE; TRANSITION METAL NITRIDES;

ALLOYS; ALUMINUM; CERIUM ALLOYS; EPITAXIAL FILMS; HAFNIUM; IONS; MULTILAYERS; NITRIDES; REACTION RATES; REAL TIME CONTROL; SINGLE CRYSTALS; SPUTTER DEPOSITION; SUPERLATTICES; TRANSITION METAL COMPOUNDS;

ION BOMBARDMENT;

EID: 78449233755     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2010.08.023     Document Type: Article

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