Interface-induced polarization and inhibition of ferroelectricity in epitaxial SrTiO3/Si

Physical Review Letters

Volumn 105, Issue 21, 2010, Pages

  Kolpak, A M ^a,b   Walker, F J ^a,b   Reiner, J W ^a,b   Segal, Y ^a,b   Su, D ^c   Sawicki, M S ^a,d   Broadbridge, C C ^a,d   Zhang, Z ^e   Zhu, Y ^a,c   Ahn, C H ^a,b   Ismail Beigi, S ^a,b  

^a YALE UNIVERSITY   (United States)

^b Yale University   (United States)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

^d SOUTHERN CONNECTICUT STATE UNIVERSITY   (United States)

^e ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL SILICON; FERROELECTRIC BEHAVIOR; FERROELECTRIC SWITCHING; FIRST-PRINCIPLES; FUNCTIONAL OXIDES; INDUCED POLARIZATION; INTERFACE CHEMISTRY; MODEL SYSTEM; SILICON-BASED; SRTIO; SYNCHROTRON X RAY DIFFRACTION;

EPITAXIAL FILMS; FERROELECTRIC FILMS; FERROELECTRICITY; MATHEMATICAL MODELS; OXIDE FILMS; POLARIZATION; SILICON OXIDES; STRONTIUM ALLOYS; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78349270834     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.105.217601     Document Type: Article

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