Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells

Journal of Physics D: Applied Physics

Volumn 43, Issue 35, 2010, Pages

  Han, Sang Heon ^a,b   Lee, Dong Yul ^b   Shim, Hyun Wook ^b   Kim, Gwon Chul ^b   Kim, Young Sun ^b   Kim, Sung Tae ^b   Lee, Sang Jun ^a   Cho, Chu Young ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-OVER CURRENTS; EXTERNAL QUANTUM EFFICIENCY; HIGH CURRENT DENSITIES; HOLE WAVE FUNCTIONS; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; MULTIPLE QUANTUM WELLS; OPERATING VOLTAGE;

CURRENT DENSITY; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS; WELLS;

QUANTUM EFFICIENCY;

EID: 78249239756     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/35/354004     Document Type: Article

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