On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC

Applied Physics Letters

Volumn 97, Issue 19, 2010, Pages

  Tadjer, Marko J ^a   Feygelson, Tatyana I ^b   Hobart, Karl D ^c   Caldwell, Joshua D ^c   Anderson, Travis J ^c   Butler, James E ^c   Eddy Jr , Charles R ^c   Gaskill, D Kurt ^c   Lew, K K ^c   Vanmil, Brenda L ^c   Myers Ward, Rachael L ^c   Kub, Fritz J ^c   Sollenberger, Gregory ^d   Brillson, Leonard ^d  

^a UNIVERSITY OF MARYLAND   (United States)

^b SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CATHODOLUMINESCENCE (CL); DOPED NANOCRYSTALLINE DIAMOND; NANOCRYSTALLINE DIAMONDS; NCD FILMS; RECTIFYING BEHAVIORS; REVERSE CURRENTS; SINGLE CRYSTAL DIAMOND; ZERO BIAS;

DIAMOND FILMS; DIAMONDS; DISTILLATION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; HETEROJUNCTIONS; SILICON CARBIDE; SINGLE CRYSTALS;

ELECTRIC RECTIFIERS;

EID: 78249234415     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3515858     Document Type: Article

References (31)

1. W. Yang, O. Auciello, J. E. Butler, W. Cai, J. A. Carlisle, J. E. Gerbi, D. M. Gruen, T. Knickerbocker, T. L. Lasseter, J. N. Russell, Jr., L. M. Smith, and R. J. Hamers, Nature Mater. 1476-1122 1, 253 (2002). 10.1038/nmat779
2. J. S. Hovis, S. K. Coulter, R. J. Hamers, M. P. D'Evelyn, J. N. Russell, Jr., and J. E. Butler, J. Am. Chem. Soc. 0002-7863 122, 732 (2000). 10.1021/ja9929077
3. L. Sekaric, J. M. Parpia, H. G. Craighead, T. Feygelson, B. H. Houston, and J. E. Butler, Appl. Phys. Lett. 0003-6951 81, 4455 (2002). 10.1063/1.1526941
4. A. V. Sumant, O. Auciello, R. W. Carpick, S. Srinivasan, and J. E. Butler, MRS Bull. 0883-7694 38, 281 (2010).
5. M. C. Granger and M. Witek, Anal. Chem. 0003-2700 72, 3793 (2000). 10.1021/ac0000675
6. J. Philip, P. Hess, T. Feygelson, J. E. Butler, S. Chattopadhyay, K. H. Chen, and L. C. Chen, J. Appl. Phys. 0021-8979 93, 2164 (2003). 10.1063/1.1537465
7. M. J. Tadjer, T. J. Anderson, K. D. Hobart, T. I. Feygelson, M. A. Mastro, J. D. Caldwell, J. K. Hite, C. R. Eddy, Jr., F. J. Kub, J. E. Butler, and J. Melngailis, Proceedings of the IEEE Device Research Conference, 2010, pp. 125-126.
8. J. E. Butler and A. V. Sumant, Chem. Vap. Deposition 0948-1907 14, 145 (2008), and references therein. 10.1002/cvde.200700037
9. M. Bevilacqua, N. Tumilty, C. Mitra, H. Ye, T. Feygelson, J. E. Butler, and R. B. Jackman, J. Appl. Phys. 0021-8979 107, 033716 (2010). 10.1063/1.3291118
10. M. J. Tadjer, K. D. Hobart, J. D. Caldwell, J. E. Butler, K. X. Liu, C. R. Eddy, Jr., D. K. Gaskill, K. K. Lew, B. L. VanMil, R. L. Myers-Ward, M. G. Ancona, F. J. Kub, and T. I. Feygelson Appl. Phys. Lett. 0003-6951 91, 163508 (2007). 10.1063/1.2800886
11. O. A. Williams, M. Nesladek, M. Daenen, S. Michaelson, A. Hoffman, E. Osawa, K. Haenen, and R. B. Jackman, Diamond Relat. Mater. 0925-9635 17, 1080 (2008), and references therein. 10.1016/j.diamond.2008.01.103
12. B. L. VanMil, K. K. Lew, R. L. Myers-Ward, R. T. Holm, D. K. Gaskill, and C. R. Eddy, Jr., Mater. Sci. Forum 0255-5476 556-557, 125 (2007). 10.4028/www.scientific.net/MSF.556-557.125
13. M. J. Tadjer, T. J. Anderson, K. D. Hobart, T. I. Feygelson, J. E. Butler, and F. J. Kub, Mater. Sci. Forum 0255-5476 645-648, 733 (2010).
14. W. Gajewski, P. Achatz, O. A. Williams, K. Haenen, E. Bustarret, M. Stutzmann, and J. A. Garrido, Phys. Rev. B 0556-2805 79, 045206 (2009). 10.1103/PhysRevB.79.045206
15. D. M. Malta, J. A. von Windheim, H. A. Wynands, and B. A. Fox, J. Appl. Phys. 0021-8979 77, 1536 (1995). 10.1063/1.358905
16. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New York, 2006), p. 130.
17. S. M. Sze and K. Ng, Physics of Semiconductor Devices (Wiley, New Jersey, 2007), p. 435.
18. J. Karlovsk, Solid-State Electron. 0038-1101 10, 1109 (1967). 10.1016/0038-1101(67)90131-1
19. N. Jin, R. Yu, S. -Y. Chung, P. R. Berger, P. E. Thompson, and P. Fay, IEEE Electron Device Lett. 0741-3106 26, 575 (2005). 10.1109/LED.2005.852738
20. P. Esfandiari, G. Bernstein, P. Fay, W. Porod, B. Rakos, A. Zarandy, B. Berland, L. Boloni, G. Boreman, B. Lail, B. Monacelli, and A. Weeks, Proc. SPIE 0277-786X 5783, 470 (2005). 10.1117/12.606874
21. A. B. Hoofring, V. J. Kapoor, and W. Krawczonek, J. Appl. Phys. 0021-8979 66, 430 (1989). 10.1063/1.343841
22. V. I. Shashkin, Y. A. Drjagin, V. R. Zakamov, S. V. Krivov, L. M. Kukin, A. V. Murel, and Y. I. Chechenin, Int. J. Infrared Millim. Waves 0195-9271 28, 945 (2007). 10.1007/s10762-007-9272-2
23. J. Cui, J. Risein, and L. Ley, Phys. Rev. Lett. 0031-9007 81, 429 (1998). 10.1103/PhysRevLett.81.429
24. B. J. Baliga, Fundamentals of Power Semiconductor Devices (Springer Science, New York, 2008), p. 24. 10.1007/978-0-387-47314-7
25. S. Y. Han and J. -L. Lee, Appl. Phys. Lett. 0003-6951 84, 538 (2004). 10.1063/1.1644334
26. Handbook Series on Semiconductor Parameters, edited by, M. Levinstein, S. Rumyantsev, and, M. Shur, (World Scientific, London, 1996).
27. J. -Y. Raty, G. Galli, C. Bostedt, T. W. v. Buuren, and L. J. Terminello, Phys. Rev. Lett. 0031-9007 90, 037401 (2003). 10.1103/PhysRevLett.90.037401
28. L. H. Robins, L. P. Cook, E. N. Farabaugh, and A. Feldman, Phys. Rev. B 0556-2805 39, 13367 (1989). 10.1103/PhysRevB.39.13367
29. S. C. Lawson, H. Kanda, H. Kiyota, T. Tsutsumi, and H. Kawarada, J. Appl. Phys. 0021-8979 77, 1729 (1995). 10.1063/1.358865
30. S. Koizumi, K. Watanabe, M. Hasegawa, and H. Kanda, Science 0036-8075 292, 1899 (2001). 10.1126/science.1060258
31. P. Muret, J. Pernot, A. Kumar, L. Magaud, C. Mer-Calfati, and P. Bergonzo, Phys. Rev. B 0556-2805 81, 235205 (2010). 10.1103/PhysRevB.81.235205