Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat spreading films

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 125-126

  Tadjer, M J ^a   Anderson, T J ^b   Hobart, K D ^b   Feygelson, T I ^c   Mastro, M A ^b   Caldwell, J D ^b   Hite, J K ^b   Eddy Jr , C R ^b   Kub, F J ^b   Butler, J E ^b   Melngailis, J ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c SCIENCE APPLICATIONS INTERNATIONAL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HETEROSTRUCTURES; CHANNEL TEMPERATURE; CONVERTER EFFICIENCY; CRITICAL FIELDS; CVD DIAMOND; DIAMOND DEPOSITION; DRAIN BIAS; HEAT SPREADING; HIGH THERMAL CONDUCTIVITY; INTEGRATED HEAT; NANOCRYSTALLINE DIAMONDS; POWER SWITCHING; POWER SWITCHING APPLICATIONS; SELF-HEATING; SWITCHING LOSS; THERMAL BUDGET; THERMAL PROPERTIES; TRANSITION TIME; WIDE BAND GAP;

CHEMICAL VAPOR DEPOSITION; DIAMOND DEPOSITS; DIAMONDS; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; HEATING; THERMODYNAMIC PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957555580     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551873     Document Type: Conference Paper

References (3)

1. For example S. Arulkumaran et al., Solid-State Electronics 49 (2005) 1632-1638.
2. M. Seelman-Eggebert et al., Diamond and Relat. Mater. 10 (2001), 744-749.
3. A. Matulionis, Phys. Stat. Sol. (a) 203, no. 10, 2313-2325 (2006).