SCOPUS 정보 검색 플랫폼

Volumn 97, Issue 17, 2010, Pages

Characteristics of Pt/BiFeO3/TiO2/Si capacitors with TiO2 layer formed by liquid-delivery metal organic chemical vapor deposition

(6) Xie, Dan a Han, Xueguang a Li, Rui a Ren, Tianling a Liu, Litian a Zhao, Yonggang a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CAPACITANCE-VOLTAGE HYSTERESIS; ELECTRICAL PROPERTY; FERROELECTRIC POLARIZATION; INSULATING PROPERTIES; LIQUID DELIVERY; MEMORY WINDOW; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MFIS STRUCTURE; MOCVD; SI SUBSTRATES; SILICON SUBSTRATES; TIO;

CAPACITORS; ELECTRIC PROPERTIES; FERROELECTRIC FILMS; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; INDUSTRIAL CHEMICALS; LIQUIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTOR DEVICE STRUCTURES;

SILICON;

EID: 78149450365 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3490712 Document Type: Article

Times cited : (15)

References (21)

1
- 17144374896
- High-resolution x-ray diffraction and transmission electron microscopy of multiferroic BiFeO3 films
- DOI 10.1063/1.1866214, 071913
- X. D. Qi, M. Wei, Y. Lin, Q. Jia, D. Zhi, J. Dho, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. APPLAB 0003-6951 86, 071913 (2005). 10.1063/1.1866214 (Pubitemid 40509462)
- (2005) Applied Physics Letters , vol.86 , Issue.7 , pp. 1-3
- Qi, X.¹ Wei, M.² Lin, Y.³ Jia, Q.⁴ Zhi, D.⁵ Dho, J.⁶ Blamire, M.G.⁷ MacManus-Driscoll, J.L.⁸

2
- 33750542354
- 3 thin films formed on Pt-coated r-plane sapphire substrates
- DOI 10.1007/s10832-006-9917-x, Special Issue: Symposium on Functional Ceramic Materials and Thin Films of ICMAT 2005: Part II September 2006
- S. K. Singh and H. Ishiwara, J. Electroceramics. 16, 553 (2006). 10.1007/s10832-006-9917-x (Pubitemid 44673933)
- (2006) Journal of Electroceramics , vol.16 , Issue.4 , pp. 553-556
- Singh, S.K.¹ Ishiwara, H.²

3
- 33747623307
- Multiferroic and magnetoelectric materials
- DOI 10.1038/nature05023, PII NATURE05023
- W. Eerenstein, N. D. Mathur, and J. F. Scott, Nature (London) NATUAS 0028-0836 442, 759 (2006). 10.1038/nature05023 (Pubitemid 44261898)
- (2006) Nature , vol.442 , Issue.7104 , pp. 759-765
- Eerenstein, W.¹ Mathur, N.D.² Scott, J.F.³

4
- 22244450797
- Revival of the magnetoelectric effect
- DOI 10.1088/0022-3727/38/8/R01
- M. Fiebig, J. Phys. D JPAPBE 0022-3727 38, R123 (2005). 10.1088/0022-3727/38/8/R01 (Pubitemid 41244606)
- (2005) Journal of Physics D: Applied Physics , vol.38 , Issue.8
- Fiebig, M.¹

5
- 0037436499
- 3 multiferroic thin film heterostructures
- DOI 10.1126/science.1080615
- J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science SCIEAS 0036-8075 299, 1719 (2003). 10.1126/science.1080615 (Pubitemid 36337195)
- (2003) Science , vol.299 , Issue.5613 , pp. 1719-1722
- Wang, J.¹ Neaton, J.B.² Zheng, H.³ Nagarajan, V.⁴ Ogale, S.B.⁵ Liu, B.⁶ Viehland, D.⁷ Vaithyanathan, V.⁸ Schlom, D.G.⁹ Waghmare, U.V.¹⁰ Spaldin, N.A.¹¹ Rabe, K.M.¹² Wuttig, M.¹³ Ramesh, R.¹⁴

6
- 31844435609
- 3/Si MFIS capacitors with thinner insulator layer
- DOI 10.1143/JJAP.44.6977
- K. Haratake, N. Shigemitsu, M. Nishijima, T. Yoshimura, and N. Fujimura, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 44, 6977 (2005). 10.1143/JJAP.44.6977 (Pubitemid 43183049)
- (2005) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.44 , pp. 6977-6980
- Haratake, K.¹ Shigemitsu, N.² Nishijima, M.³ Yoshimura, T.⁴ Fujimura, N.⁵

7
- 31544453603
- 2 buffer layers
- DOI 10.1143/JJAP.44.6218
- K. Takahashi, K. Aizawa, B. E. Park, and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 44, 6218 (2005). 10.1143/JJAP.44.6218 (Pubitemid 43160762)
- (2005) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers , vol.44 , Issue.8 , pp. 6218-6220
- Takahashi, K.¹ Aizawa, K.² Park, B.-E.³ Ishiwara, H.⁴

8
- 0345377575
- JAPIAU 0021-8979,. 10.1063/1.1621716
- B. C. Lan, C. Y. Huang, and S. Y. Chen, J. Appl. Phys. JAPIAU 0021-8979 94, 6735 (2003). 10.1063/1.1621716
- (2003) J. Appl. Phys. , vol.94 , pp. 6735
- Lan, B.C.¹ Huang, C.Y.² Chen, S.Y.³

9
- 0031124778
- EDLEDZ 0741-3106,. 10.1109/55.563315
- E. Tokumitsu, R. Nakamura, and H. Ishiwara, IEEE Electron Device Lett. EDLEDZ 0741-3106 18, 160 (1997). 10.1109/55.563315
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 160
- Tokumitsu, E.¹ Nakamura, R.² Ishiwara, H.³

10
- 33645644997
- EDLEDZ 0741-3106,. 10.1109/LED.2006.870414
- T. P. Juan, C. -Y. Chang, and J. Y. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106 27, 217 (2006). 10.1109/LED.2006.870414
- (2006) IEEE Electron Device Lett. , vol.27 , pp. 217
- Juan, T.P.¹ Chang, C.-Y.² Lee, J.Y.³

11
- 33745625140
- 3 thin films deposited on Pt electrodes using chemical solution deposition
- DOI 10.1063/1.2218819
- S. K. Singh, H. Ishiwara, and K. Maruyama, Appl. Phys. Lett. APPLAB 0003-6951 88, 262908 (2006). 10.1063/1.2218819 (Pubitemid 43992965)
- (2006) Applied Physics Letters , vol.88 , Issue.26 , pp. 262908
- Singh, S.K.¹ Ishiwara, H.² Maruyama, K.³

12
- 58349091749
- APPLAB 0003-6951,. 10.1063/1.3062857
- X. Y. Zhang, Q. Song, F. Xu, and C. K. Ong, Appl. Phys. Lett. APPLAB 0003-6951 94, 022907 (2009). 10.1063/1.3062857
- (2009) Appl. Phys. Lett. , vol.94 , pp. 022907
- Zhang, X.Y.¹ Song, Q.² Xu, F.³ Ong, C.K.⁴

13
- 64349085846
- APPLAB 0003-6951,. 10.1063/1.3114403
- C. -M. Lin, W. -c. Shih, I. Y.-k. Chang, P. -C. Juan, and J. Y.-m. Lee., Appl. Phys. Lett. APPLAB 0003-6951 94, 142905 (2009). 10.1063/1.3114403
- (2009) Appl. Phys. Lett. , vol.94 , pp. 142905
- Lin, C.-M.¹ Shih, W.-C.² Chang, I.Y.-K.³ Juan, P.-C.⁴ Lee, J.Y.-M.⁵

14
- 34948832812
- Characterization of metal-ferroelectric (BiFe O3) -insulator (Zr O2) -silicon capacitors for nonvolatile memory applications
- DOI 10.1063/1.2794335
- Y. W. Chiang and J. M. Wu, Appl. Phys. Lett. APPLAB 0003-6951 91, 142103 (2007). 10.1063/1.2794335 (Pubitemid 47531502)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 142103
- Chiang, Y.-W.¹ Wu, J.-M.²

15
- 0004005306
- 2nd ed. (Wiley, New York), Cha
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap., pp. 255-263.
- (1981) Physics of Semiconductor Devices , pp. 255-263
- Sze, S.M.¹

16
- 24144467387
- 3 capacitor
- DOI 10.1007/s00339-004-3001-7
- S. Y. Wang, B. L. Cheng, C. Wang, S. Y. Dai, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 81, 1265 (2005). 10.1007/s00339-004-3001-7 (Pubitemid 41241902)
- (2005) Applied Physics A: Materials Science and Processing , vol.81 , Issue.6 , pp. 1265-1268
- Wang, S.Y.¹ Cheng, B.L.² Wang, C.³ Dai, S.Y.⁴ Lu, H.B.⁵ Zhou, Y.L.⁶ Chen, Z.H.⁷ Yang, G.Z.⁸

17
- 78149442352
- Harbin, China
- R. Li, D. Xie, M. M. Zhang, X. G. Han, H. W. Lin, T. L. Ren, and L. T. Liu, International Conference of the Chinese Society of Micro/Nano Technology (CSMNT), 2009, Harbin, China,.
- (2009) International Conference of the Chinese Society of Micro/Nano Technology (CSMNT)
- Li, R.¹ Xie, D.² Zhang, M.M.³ Han, X.G.⁴ Lin, H.W.⁵ Ren, T.L.⁶ Liu, L.T.⁷

18
- 0003606373
- (PWS, Boston), Cha,.
- B. S. Guru, Electromagnetic Field Theory Fundamentals (PWS, Boston, 2004), Chap., p. 105.
- (2004) Electromagnetic Field Theory Fundamentals , pp. 105
- Guru, B.S.¹

19
- 45449099058
- MLETDJ 0167-577X,. 10.1016/j.matlet.2008.04.006
- Y. Xu and M. Shen, Mater. Lett. MLETDJ 0167-577X 62, 3600 (2008). 10.1016/j.matlet.2008.04.006
- (2008) Mater. Lett. , vol.62 , pp. 3600
- Xu, Y.¹ Shen, M.²

20
- 54049143565
- D. Li, Y. H. He, and Q. J. Liu, College Physics 24, 36 (2005).
- (2005) College Physics , vol.24 , pp. 36
- Li, D.¹ He, Y.H.² Liu, Q.J.³

21
- 0000665290
- J. Frenkel, Technical Physics of the USSR 5, 685 (1938).
- (1938) Technical Physics of the USSR , vol.5 , pp. 685
- Frenkel, J.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.