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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 6, 2005, Pages 1265-1268

Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr 0.4TiO3/Nb-SrTiO3 capacitor

(8) Wang, S Y a Cheng, B L a Wang, C a Dai, S Y a Lu, H B a Zhou, Y L a Chen, Z H a Yang, G Z a

a INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; DIELECTRIC FILMS; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRODES; LEAKAGE CURRENTS; PLATINUM; SCHOTTKY BARRIER DIODES;

ASYMMETRIC BEHAVIOR; BARRIER HEIGHT; SCHOTTKY EMISSION; TRAPPED CARRIERS;

CAPACITORS;

EID: 24144467387 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-3001-7 Document Type: Article

Times cited : (21)

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