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Applied Physics Letters

Volumn 97, Issue 17, 2010, Pages

Spin polarized electron transmission into GaAs quantum well across Fe 3 O4: Optical spin orientation analysis

(6) Wada, E a Shirahata, Y a Naito, T a Itoh, M a Yamaguchi, M b Taniyama, T c

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b NAGOYA UNIVERSITY (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER STRUCTURES; BIAS DEPENDENCE; ELECTRON SPINS; FREE EXCITONS; GAAS QUANTUM WELLS; HIGH EFFICIENCY; MAGNETIC INSULATOR; OPTICAL POLARIZATION; OPTICAL SPIN ORIENTATION; PHOTOCURRENT MEASUREMENT; QUANTUM WELL; SPIN FILTERING; SPIN INJECTION; SPIN-POLARIZED ELECTRONS; TRANSMISSION MECHANISMS;

ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; SPIN DYNAMICS; SPIN POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78149431685 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3509419 Document Type: Article

Times cited : (4)

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