Electrical determination of the spin relaxation time of photoexcited electrons in GaAs

Applied Physics Letters

Volumn 96, Issue 2, 2010, Pages

  Kurebayashi, H ^a   Trypiniotis, T ^a   Lee, K ^a   Easton, S ^a   Ionescu, A ^a   Farrer, I ^a   Ritchie, D A ^a   Bland, J A C ^a   Barnes, C H W ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL FE/GAAS; GAAS; MODEL-BASED; PHOTOEXCITED ELECTRONS; SPIN DEPENDENT TRANSPORT; SPIN RELAXATION; SPIN RELAXATION TIME; TEMPERATURE DEPENDENCE; TIME OF FLIGHT;

DYNAMIC POSITIONING; GALLIUM ALLOYS; GALLIUM ARSENIDE; HOT ELECTRONS; PERCOLATION (SOLID STATE); RELAXATION PROCESSES; SEMICONDUCTING GALLIUM;

SPIN DYNAMICS;

EID: 74549157150     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3291066     Document Type: Article

References (19)

1. F. Meier, Optical Orientation (North-Holland, Amsterdam, 1984).
2. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 0036-8075 294, 1488 (2001). 10.1126/science.1065389 (Pubitemid 33063913)
3. D. J. Monsma, R. Vlutters, and J. C. Lodder, Science 0036-8075 281, 407 (1998). 10.1126/science.281.5375.407 (Pubitemid 28340783)
4. I. Appelbaum, B. Huang, and D. Monsma, Nature (London) 0028-0836 447, 295 (2007). 10.1038/nature05803 (Pubitemid 46788838)
5. H. Kurebayashi, S. J. Steinmuller, J. B. Laloe, T. Trypiniotis, S. Easton, A. Ionescu, J. R. Yates, and J. A. C. Bland, Appl. Phys. Lett. 0003-6951 91, 102114 (2007). 10.1063/1.2783187 (Pubitemid 47379035)
6. S. Honda, H. Itoh, J. Inoue, H. Kurebayashi, T. Trypiniotis, C. H. W. Barnes, A. Hirohata, and J. A. C. Bland, Phys. Rev. B 0163-1829 78, 245316 (2008). 10.1103/PhysRevB.78.245316
7. J. A. C. Bland, S. J. Steinmuller, A. Hirohata, and T. Taniyama, in Ultrathin Magnetic Structures IV, edited by, J. A. C. Bland, and, B. Heinrich, (Springer, Berlin, 2005), Chap.
8. S. A. Crooker, E. S. Garlid, A. N. Chantis, D. L. Smith, K. S. M. Reddy, Q. O. Hu, T. Kondo, C. J. Palmstrom, and P. A. Crowell, Phys. Rev. B 0163-1829 80, 041305 (2009). 10.1103/PhysRevB.80.041305
9. S. J. Steinmuller, C. M. Gurtler, G. Wastlbauer, and J. A. C. Bland, Phys. Rev. B 0163-1829 72, 045301 (2005). 10.1103/PhysRevB.72.045301 (Pubitemid 41526591)
10. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
11. E. Burstein and S. Lundqvist, Tunneling Phenomena in Solids (Plenum, New York, 1969).
12. J. J. Åkerman, R. Escudero, C. Leighton, S. Kim, I. K. Schuller, and D. A. Rabson, Appl. Phys. Lett. 0003-6951 77, 1870 (2000). 10.1063/1.1310633
13. A. T. Hanbicki, O. M. J. van't Erve, R. Magno, G. Kioseoglou, C. H. Li, B. T. Jonker, G. Itskos, R. Mallory, M. Yasar, and A. Petrou, Appl. Phys. Lett. 82, 4092 (2003). 10.1063/1.1580631
14. J. M. Kikkawa and D. Awschalom, Phys. Rev. Lett. 0031-9007 80, 4313 (1998). 10.1103/PhysRevLett.80.4313
15. R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, B. Ya. Meltser, M. N. Stepanova, B. P. Zakharchenya, D. Gammon, and D. S. Katzer, Phys. Rev. B 0163-1829 66, 245204 (2002). 10.1103/PhysRevB.66.245204
16. S. Krishnamurthy, M. Schilfgaarde, and N. Newman, Appl. Phys. Lett. 0003-6951 83, 1761 (2003). 10.1063/1.1606873
17. D. R. Lide, Handbook of Chemistry and Physics, 76th ed. (CRC, London, 1995).
18. C. D. Thurmond, J. Electrochem. Soc. 0013-4651 122, 1133 (1975). 10.1149/1.2134410
19. S. Adachi, Properties of Aluminium Gallium Arsenide (Institution of Engineering and Technology, London, 1993).