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Volumn 95, Issue 20, 2009, Pages

Blue light-emitting diodes with a roughened backside fabricated by wet etching

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LIGHT-EMITTING; ETCHING PROCESS; ETCHING RATE; GAN BUFFER LAYERS; LASER DECOMPOSITION; LASER SCRIBING; LED CHIPS; LIGHT-EXTRACTION EFFICIENCY; OUTPUT POWER; ROUGHENED SURFACES; SACRIFICIAL LAYER; WET-ETCHING PROCESS;

EID: 70450253312     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3262968     Document Type: Article
Times cited : (23)

References (14)
  • 7
    • 26844474296 scopus 로고    scopus 로고
    • Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall
    • DOI 10.1109/LPT.2005.854347
    • C. -F. Lin, Z. -J. Yang, J. -H. Zheng, and J. -J. Dai, IEEE Photonics Technol. Lett. 1041-1135 17, 2038 (2005). 10.1109/LPT.2005.854347 (Pubitemid 41448503)
    • (2005) IEEE Photonics Technology Letters , vol.17 , Issue.10 , pp. 2038-2040
    • Lin, C.-F.1    Yang, Z.-J.2    Zheng, J.-H.3    Dai, J.-J.4
  • 10
    • 0001493695 scopus 로고    scopus 로고
    • Crystallographic wet chemical etching of GaN
    • DOI 10.1063/1.122543, PII S0003695198007414
    • D. A. Stocker, E. F. Schubert, and J. M. Redwing, Appl. Phys. Lett. 0003-6951 73, 2654 (1998). 10.1063/1.122543 (Pubitemid 128674027)
    • (1998) Applied Physics Letters , vol.73 , Issue.18 , pp. 2654-2656
    • Stocker, D.A.1    Schubert, E.F.2    Redwing, J.M.3
  • 14
    • 33745953344 scopus 로고    scopus 로고
    • GaN-based light-emitting diode structure with monolithically integrated sidewall deflectors for enhanced surface emission
    • DOI 10.1109/LPT.2006.879559
    • J. -S. Lee, J. Lee, S. Kim, and H. Jeon, IEEE Photonics Technol. Lett. 1041-1135 18, 1588 (2006). 10.1109/LPT.2006.879559 (Pubitemid 44057505)
    • (2006) IEEE Photonics Technology Letters , vol.18 , Issue.15 , pp. 1588-1590
    • Lee, J.-S.1    Lee, J.2    Kim, S.3    Jeon, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.