Material properties of microcrystalline silicon for solar cell application

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 207-210

  Lee, Czang Ho ^a   Shin, Myunghun ^a   Lim, Mi Hwa ^a   Seo, Jun Yong ^a   Lee, Jung Eun ^a   Lee, Hee Yong ^a   Kim, Byoung June ^a   Choi, Donguk ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Amorphous silicon; Microcrystalline silicon; Plasma enhanced chemical vapor deposition; Solar cell

Indexed keywords

ABSORPTION LAYER; AIR EXPOSURE; ATOMIC HYDROGEN DENSITY; DARK CONDUCTIVITY; DEVICE OPERATIONS; ELECTRODE GAP; HIGH PRESSURE; HIGH QUALITY; HIGH STABILITY; LOW PRESSURES; MATERIAL PROPERTY; MATERIAL REQUIREMENTS; MICROSTRUCTURE CHARACTERISTICS; SI FILMS; SOLAR CELL PERFORMANCE; SOLAR-CELL APPLICATIONS; THIN FILM SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPE;

ION BOMBARDMENT; MATERIALS PROPERTIES; MICROCRYSTALLINE SILICON; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SOLAR CELLS; SOLAR POWER GENERATION; THIN FILM TRANSISTORS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 78149360447     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.02.021     Document Type: Conference Paper

References (10)

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