Enhanced light extraction in GaN-based light-emitting diodes with holographically fabricated concave hemisphere-shaped patterning on indium-tin-oxide layer

Japanese Journal of Applied Physics

Volumn 49, Issue 9 PART 1, 2010, Pages

  Seo, Tae Hoon ^a   Oh, Tae Su ^a   Lee, Yong Seok ^a   Jeong, Hyun ^a   Kim, Jan Di ^a   Kim, Hun ^a   Park, Ah Hyun ^a   Lee, Kang Jea ^a   Hong, Chang Hee ^a   Suh, Eun Kyung ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GAN-BASED LIGHT-EMITTING DIODES; INDIUM TIN OXIDE; LASER HOLOGRAPHIC LITHOGRAPHY; LIGHT EXTRACTION; LIGHT OUTPUT POWER; PATTERNED ITO;

ELECTROMAGNETIC INDUCTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; LITHOGRAPHY; PLASMA ETCHING; TIN; TITANIUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 78049410046     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.092101     Document Type: Article

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