Reliability of high-temperature operation for GaN-based operational amplifiers

Materials Research Society Symposium Proceedings

Volumn 1195, Issue , 2010, Pages 193-196

  Nomoto, Kazuki ^a   Hasegawa, Kazuya ^a   Satoh, Masataka ^a   Nakamura, Tohru ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; CURRENT COLLAPSE; ELECTRICAL CHARACTERISTIC; GAN CAP LAYERS; GATE-LEAKAGE CURRENT; OPERATIONAL AMPLIFIER (OPAMP); SILICON SUBSTRATES; SOURCE RESISTANCE;

BANDPASS AMPLIFIERS; GALLIUM ALLOYS; GALLIUM NITRIDE; ION IMPLANTATION; LEAKAGE CURRENTS; OPERATIONAL AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS;

SCHOTTKY BARRIER DIODES;

EID: 78049350356     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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