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Volumn 20, Issue 43, 2010, Pages 9754-9759

Effect of self assembled monolayer on the energy structure of pentacene and Ru/Ti semiconductor-metal contact measured with in situ ultraviolet photoemission spectroscopy

(2) Yun, Dong Jin a Rhee, Shi Woo a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

4-FLUOROTHIOPHENOL; ADHESION LAYER; BARRIER HEIGHTS; CHEMICAL BONDING STATE; ELECTRICAL PROPERTY; ENERGY STRUCTURES; GRAIN SIZE; HIGH WORK FUNCTION; IN-SITU; INTERFACE PROPERTY; LOW RESISTIVITY; METAL ELECTRODES; METAL-SEMICONDUCTOR CONTACTS; ON/OFF RATIO; PENTACENE LAYERS; PENTACENE THIN FILM TRANSISTORS; PENTACENES; RU FILM; SEMICONDUCTOR METALS; SOURCE AND DRAIN ELECTRODES; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

CHEMICAL BONDS; ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; EXCITONS; FIELD EFFECT TRANSISTORS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; LUMINESCENCE OF ORGANIC SOLIDS; METALS; PHOTOEMISSION; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTOR GROWTH; THIN FILM TRANSISTORS; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM GROWTH;

EID: 78049342732 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c0jm01710h Document Type: Article

Times cited : (12)

References (29)

1
- 55849100026
- S. W. Rhee D. J. Yun J. Mater. Chem. 2008 18 5437
- (2008) J. Mater. Chem. , vol.18 , pp. 5437
- Rhee, S.W.¹ Yun, D.J.²

2
- 23044480892
- A. Facchetti M. H. Yoon T. J. Marks Adv. Mater. 2005 17 1705
- (2005) Adv. Mater. , vol.17 , pp. 1705
- Facchetti, A.¹ Yoon, M.H.² Marks, T.J.³

3
- 34248348214
- A. R. Murphy J. M. J. Frechet Chem. Rev. 2007 107 1066
- (2007) Chem. Rev. , vol.107 , pp. 1066
- Murphy, A.R.¹ Frechet, J.M.J.²

4
- 66149092677
- D. Braga G. Horowitz Adv. Mater. 2009 21 1473
- (2009) Adv. Mater. , vol.21 , pp. 1473
- Braga, D.¹ Horowitz, G.²

5
- 43849103446
- P. Marmont N. Battaglini P. Lang G. Horowitz J. Hwang A. Kahn C. Amato P. Calas Org. Electron. 2008 9 419
- (2008) Org. Electron. , vol.9 , pp. 419
- Marmont, P.¹ Battaglini, N.² Lang, P.³ Horowitz, G.⁴ Hwang, J.⁵ Kahn, A.⁶ Amato, C.⁷ Calas, P.⁸

6
- 0037290286
- P. V. Necliudov M. S. Shur D. J. Gundlach T. N. Jackson Solid-State Electron. 2003 47 259
- (2003) Solid-State Electron. , vol.47 , pp. 259
- Necliudov, P.V.¹ Shur, M.S.² Gundlach, D.J.³ Jackson, T.N.⁴

7
- 52649128295
- D. J. Yun S. W. Rhee J. Electrochem. Soc. 2008 155 H899
- (2008) J. Electrochem. Soc. , vol.155 , pp. 899
- Yun, D.J.¹ Rhee, S.W.²

8
- 27644501932
- C. W. Chu S. H. Li C. W. Chen V. Shrotriya Y. Yang Appl. Phys. Lett. 2005 87 193508
- (2005) Appl. Phys. Lett. , vol.87 , pp. 193508
- Chu, C.W.¹ Li, S.H.² Chen, C.W.³ Shrotriya, V.⁴ Yang, Y.⁵

9
- 67650577068
- D. J. Yun S. W. Rhee J. Electrochem. Soc. 2009 156 H634
- (2009) J. Electrochem. Soc. , vol.156 , pp. 634
- Yun, D.J.¹ Rhee, S.W.²

10
- 35349006995
- D. J. Yun D. K. Lee H. K. Jeon S. W. Rhee Org. Electron. 2007 8 690
- (2007) Org. Electron. , vol.8 , pp. 690
- Yun, D.J.¹ Lee, D.K.² Jeon, H.K.³ Rhee, S.W.⁴

11
- 38049077298
- D. Jumaki T. Umeda S. Tokito Appl. Phys. Lett. 2008 92 013301
- (2008) Appl. Phys. Lett. , vol.92 , pp. 013301
- Jumaki, D.¹ Umeda, T.² Tokito, S.³

12
- 33750177202
- N. Koch A. Vollmer Appl. Phys. Lett. 2006 89 162107
- (2006) Appl. Phys. Lett. , vol.89 , pp. 162107
- Koch, N.¹ Vollmer, A.²

13
- 14644408076
- N. Koch A. Elschner J. P. Rabe R. L. Johnson Adv. Mater. 2005 17 330
- (2005) Adv. Mater. , vol.17 , pp. 330
- Koch, N.¹ Elschner, A.² Rabe, J.P.³ Johnson, R.L.⁴

14
- 16244404981
- B. Boer A. Hadipour M. M. Mandoc T. Woudenbergh P. W. M. Blom Adv. Mater. 2005 17 621
- (2005) Adv. Mater. , vol.17 , pp. 621
- Boer, B.¹ Hadipour, A.² Mandoc, M.M.³ Woudenbergh, T.⁴ Blom, P.W.M.⁵

15
- 34250349630
- H. S. Lee J. H. Cho W. K. Kim J. L. Lee K. Cho Electrochem. Solid-State Lett. 2007 10 H239
- (2007) Electrochem. Solid-State Lett. , vol.10 , pp. 239
- Lee, H.S.¹ Cho, J.H.² Kim, W.K.³ Lee, J.L.⁴ Cho, K.⁵

16
- 9744244957
- E. V. JelenKovic K. Y. Tong J. Vac. Sci. Technol., B 2004 25 2319
- (2004) J. Vac. Sci. Technol., B , vol.25 , pp. 2319
- Jelenkovic, E.V.¹ Tong, K.Y.²

17
- 18044398972
- J. C. Love L. A. Estroff J. K. Kriebel R. G. Nuzzo G. M. Whitesides Chem. Rev. 2005 105 1103
- (2005) Chem. Rev. , vol.105 , pp. 1103
- Love, J.C.¹ Estroff, L.A.² Kriebel, J.K.³ Nuzzo, R.G.⁴ Whitesides, G.M.⁵

18
- 25144437010
- S. W. Kim J. M. Baik J. L. Lee Electrochem. Solid-State Lett. 2005 8 H79
- (2005) Electrochem. Solid-State Lett. , vol.8 , pp. 79
- Kim, S.W.¹ Baik, J.M.² Lee, J.L.³

19
- 43049125159
- D. J. Yun S. W. Rhee J. Electrochem. Soc. 2008 155 H357
- (2008) J. Electrochem. Soc. , vol.155 , pp. 357
- Yun, D.J.¹ Rhee, S.W.²

20
- 0036921392
- W. W. Zhang X. M. Ren H. F. Li C. S. Lu C. J. Hu H. Z. Zhu Q. J. Meng J. Colloid Interface Sci. 2002 255 150
- (2002) J. Colloid Interface Sci. , vol.255 , pp. 150
- Zhang, W.W.¹ Ren, X.M.² Li, H.F.³ Lu, C.S.⁴ Hu, C.J.⁵ Zhu, H.Z.⁶ Meng, Q.J.⁷

21
- 36849041044
- K. Hong J. W. Lee S. Y. Yang K. Shin H. Jeon S. H. Kim C. Yang C. E. Park Org. Electron. 2008 9 21
- (2008) Org. Electron. , vol.9 , pp. 21
- Hong, K.¹ Lee, J.W.² Yang, S.Y.³ Shin, K.⁴ Jeon, H.⁵ Kim, S.H.⁶ Yang, C.⁷ Park, C.E.⁸

22
- 0011336568
- H. Ishii K. Sugiyama E. Ito K. Seki Adv. Mater. 1999 11 605
- (1999) Adv. Mater. , vol.11 , pp. 605
- Ishii, H.¹ Sugiyama, K.² Ito, E.³ Seki, K.⁴

23
- 42149096016
- J. P. Hong A. Y. Park S. Lee J. Kang N. Shin D. Y. Yoon Appl. Phys. Lett. 2008 92 143311
- (2008) Appl. Phys. Lett. , vol.92 , pp. 143311
- Hong, J.P.¹ Park, A.Y.² Lee, S.³ Kang, J.⁴ Shin, N.⁵ Yoon, D.Y.⁶

24
- 61349188973
- M. Kitamura Y. Kuzumoto S. Aomori J. H. Na Y. Arakawa Appl. Phys. Lett. 2009 94 083310
- (2009) Appl. Phys. Lett. , vol.94 , pp. 083310
- Kitamura, M.¹ Kuzumoto, Y.² Aomori, S.³ Na, J.H.⁴ Arakawa, Y.⁵

25
- 78049326042
- 965
- N. Hiroshiba R. Kumashiro N. Komatsu Y. Suto H. Ishii S. Takaishi M. Yamashita K. Tsukagoshi K. Tanigaki Mater. Res. Soc. Symp. Proc. 2007 965
- (2007) Mater. Res. Soc. Symp. Proc. , vol.965
- Hiroshiba, N.¹ Kumashiro, R.² Komatsu, N.³ Suto, Y.⁴ Ishii, H.⁵ Takaishi, S.⁶ Yamashita, M.⁷ Tsukagoshi, K.⁸ Tanigaki, K.⁹

26
- 68249132539
- X. Cheng Y. Y. Noh J. Wang M. Tello J. Fresch R. P. Blum A. Vollmer J. P. Rabe N. Koch H. Sirringhaus Adv. Mater. 2009 19 2407
- (2009) Adv. Mater. , vol.19 , pp. 2407
- Cheng, X.¹ Noh, Y.Y.² Wang, J.³ Tello, M.⁴ Fresch, J.⁵ Blum, R.P.⁶ Vollmer, A.⁷ Rabe, J.P.⁸ Koch, N.⁹ Sirringhaus, H.¹⁰

27
- 15844405851
- W. S. Hu Y. T. Tao Y. J. Hsu D. H. Wei Y. S. Wu Langmuir 2005 21 2260
- (2005) Langmuir , vol.21 , pp. 2260
- Hu, W.S.¹ Tao, Y.T.² Hsu, Y.J.³ Wei, D.H.⁴ Wu, Y.S.⁵

28
- 20744459761
- K. P. Pernstich S. Haas D. Oberhoff C. Goldmann D. J. Gundlach B. Batlogg A. N. Rashd G. Schitter J. Appl. Phys. 2004 96 6431
- (2004) J. Appl. Phys. , vol.96 , pp. 6431
- Pernstich, K.P.¹ Haas, S.² Oberhoff, D.³ Goldmann, C.⁴ Gundlach, D.J.⁵ Batlogg, B.⁶ Rashd, A.N.⁷ Schitter, G.⁸

29
- 36048993928
- K. Suemori S. Uemura M. Yoshida S. Hoshino T. Kodzasa T. Kamata Jpn. J. Appl. Phys. 2007 46 L883
- (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 883
- Suemori, K.¹ Uemura, S.² Yoshida, M.³ Hoshino, S.⁴ Kodzasa, T.⁵ Kamata, T.⁶

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