Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistors

Electrochemical and Solid-State Letters

Volumn 10, Issue 8, 2007, Pages

  Lee, Hwa Sung ^a   Cho, Jeong Ho ^a   Kim, Woong Kwon ^a   Lee, Jong Lam ^a   Cho, Kilwon ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL ELECTRODES; INDIUM COMPOUNDS; PLASMAS; SYNCHROTRON RADIATION; WORK FUNCTION;

FIELD EFFECT MOBILITY; HOLE INJECTION BARRIER; PENTACENE; PLASMA TREATMENTS;

THIN FILM TRANSISTORS;

EID: 34250349630     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2746127     Document Type: Article

References (26)

1. A. Rogers, Z. Bao, K. Baldwin, A. Dodabalapur, B. Crone, V. R. Raju, V. Kuck, H. E. Katz, K. Amundson, J. Ewing, and P. Drzaic, Proc. Natl. Acad. Sci. U.S.A., 98, 4835 (2001).
2. A. Facchetti, M. H. Yoon, and T. J. Marks, J. Am. Chem. Soc., 128, 4928 (2006).
3. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.), 14, 99 (2002).
4. H. Yang, T. J. Shin, M. M. Ling, K. Cho, C. Y. Ryu, and Z. Bao, J. Am. Chem. Soc., 127, 11542 (2005).
5. H. S. Lee, D. H. Kim, J. H. Cho, Y. D. Park, J. S. Kim, and K. Cho, Adv. Funct. Mater., 16, 1859 (2006).
6. D. J. Gundlach, L. Jia, and T. N. Jackson, IEEE Electron Device Lett., 22, 571 (2001).
7. J. H. Cho, W. H. Lee, Y. D. Park, W.-K. Kim, S. Y. Kim, J.-L. Lee, and K. Cho, Electrochem. Solid-State Lett., 9, G147 (2006).
8. H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E. P. Woo, Science, 190, 2123 (2000).
9. J. F. Wager, Science, 300, 1245 (2003).
10. H. Kajii, A. Sakakibara, H. Okuya, T. Morimune, and Y. Ohmori, Thin Solid Films, 499, 415 (2006).
11. C. C. Wu, C. I. Wu, J. C. Strum, and A. Kahn, Appl. Phys. Lett., 70, 1348 (1997).
12. Y. Park, V. Choong, Y. Gao, B. R. Hsieh, and C. W. Tang, Appl. Phys. Lett., 68, 2699 (1996).
13. J. S. Kim, M. Granström, R. H. Friend, N. Johansson, W. R. Salaneck, R. Daik, W. J. Feast, and F. Cacialli, J. Appl. Phys., 84, 6859 (1998).
14. H. Y. Yu, X. D. Feng, D. Grozea, and Z. H. Lu, Appl. Phys. Lett., 78, 2595 (2001).
15. W. R. Salaneck, N. Johansson, K. Z. Xing, F. Cacialli, R. H. Friend, G. Beamson, and D. T. Clark, Synth. Met., 92, 207 (1998).
16. K. H. Lee, H. W. Jang, K.-B. Kim, Y.-H. Tak, and J.-L. Lee, J. Appl. Phys., 95, 586 (2004).
17. W. Song, S. K. So, and L. Cao, Appl. Phys. A, A72, 361 (2001).
18. M. Mizuno, T. Miyamoto, T. Ohnishi, and H. Hayashi, Jpn. J. Appl. Phys., Part 1, 36, 3408 (1997).
19. Z. Z. You, J. Y. Dong, and S. D. Fang, Phys. Status Solidi A, 201, 3221 (2004).
20. B. L. Low, F. R. Zhu, K. R. Zhang, and S. J. Chua, Thin Solid Films, 417, 116 (2002).
21. S. Y. Kim, J.-L. Lee, K.-B. Kim, and Y.-H. Tak, J. Appl. Phys., 95, 2560 (2004).
22. Y. Jang, D. H. Kim, Y. D. Park, J. H. Cho, M. Hwang, and K. Cho, Appl. Phys. Lett., 87, 152105 (2005).
23. W. Y. Chou and H. L. Cheng, Adv. Funct. Mater., 14, 811 (2004).
24. N. Arora, MOSFET Models for VLSI Circuit Simulation Theory and Practice, Springer, New York (1993).
25. W.-K. Kim, K. Hong, and J.-L. Lee, Appl. Phys. Lett., 89, 142117 (2006).
26. C.-W. Chu, S.-H. Li, C.-W. Chen, V. Shrotriya, and Y. Yang, Appl. Phys. Lett., 87, 193508 (2005).