SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 157, Issue 6, 2010, Pages

Low resistance ohmic contacts to Bi2 Te3 using Ni and Co metallization

(6) Gupta, Rahul P a Xiong, K a White, J B b Cho, Kyeongjae a Alshareef, H N c Gnade, B E a

a The University of Texas at Dallas (United States)

b Marlow Industries Inc (United States)

c KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

CO CONTACTS; CONTACT METALLIZATION; CONTACT RESISTIVITIES; IN-SITU; LESS-DIFFUSION; LOW RESISTANCE; METAL DEPOSITION; METALLIZATIONS; POST DEPOSITION ANNEALING; SPECIFIC CONTACT RESISTIVITY; SPUTTER CLEANING; SURFACE FREE; SURFACE PREPARATION; THERMOELECTRIC MATERIAL; TRANSFER LENGTH METHODS;

FILM PREPARATION; METAL CLEANING; METALLIZING; OHMIC CONTACTS; SURFACE TREATMENT; TELLURIUM COMPOUNDS;

COBALT;

EID: 77958612687 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3385154 Document Type: Article

Times cited : (70)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.