Application of ZnO to passivate the GaN-based device structures

Materials Research Society Symposium Proceedings

Volumn 1035, Issue , 2008, Pages 104-109

  Kaminska, Eliana ^a   Piotrowska, Anna ^a   Di Forte Poisson, Marie Antoinette ^b   Delage, Sylvain ^b   Lahreche, Hacene ^c   Kwietniewski, Norbert ^a   Pasternak, Iwona ^a   Kruszka, Renata ^a   Guziewicz, Marek ^a   Boguslawski, Piotr ^d   Dynowska, Elzbieta ^d   Borysiewicz, Michal ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b NOKIA RESEARCH CENTER   (United States)

^c Picogiga International   (France)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; DEVICE STRUCTURES; HYGROSCOPIC NATURE; LATTICE-MATCHED; LOW TEMPERATURES; OUTPUT CHARACTERISTICS; REACTIVE SPUTTER DEPOSITION; SCHOTTKY; ZNO; ZNO SURFACE;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; ZINC;

ZINC OXIDE;

EID: 70350279310     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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