Room-temperature ferromagnetism and terahertz emission of Mn-doped InGaAs and GaAsSb nanowires

Nanotechnology

Volumn 21, Issue 43, 2010, Pages

  Kong, Kang Jun ^a   Jung, Chan Su ^a   Jung, Gyeong Bok ^a   Cho, Yong Jae ^a   Kim, Han Sung ^a   Park, Jeunghee ^a   Yu, Nan Ei ^b   Kang, Chul ^b  

^a Korea University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR TRANSPORT; FERROMAGNETIC BEHAVIORS; GAAS; LOCAL FIELD ENHANCEMENT; METAL CLUSTER; MN CONCENTRATIONS; MN-DOPED; MN-DOPING; MOMENT MEASUREMENTS; ROOM TEMPERATURE; ROOM-TEMPERATURE FERROMAGNETISM; SINGLE-CRYSTALLINE; SURFACE PLASMONS; TERAHERTZ EMISSIONS; X-RAY MAGNETIC CIRCULAR DICHROISM; ZINC BLENDE;

DICHROISM; DOPING (ADDITIVES); FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; GALLIUM ARSENIDE; MAGNETIC MOMENTS; MANGANESE; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SPECTROSCOPY;

MANGANESE COMPOUNDS;

EID: 77958517559     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/43/435703     Document Type: Article

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