Electronic structure and carrier dynamics of the ferromagnetic semiconductor Ga1-xMnxAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 16, 2003, Pages

  Singley, J ^a,c   Burch, S ^a   Kawakami, R ^b,d   Stephens, J ^b   Awschalom, D ^b   Basov, N ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; MANGANESE;

ARTICLE; DENSITY; ELECTRONICS; INFRARED SPECTROSCOPY; MAGNETISM; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 85039022134     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.165204     Document Type: Article

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