Enhanced terahertz emission from ZnSe nano-grain surface

Journal of Lightwave Technology

Volumn 26, Issue 11, 2008, Pages 1519-1523

  He, Shan ^a   Chen, Xiaoshu ^a   Wu, Xiaojun ^a   Wang, Gang ^a   Zhao, Fuli ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

Nano grain; Optical rectification; Surface field enhancement; Terahertz (THz) emission; ZnSe

Indexed keywords

ABLATION; AGRICULTURAL PRODUCTS; ELECTRIC RECTIFIERS; GRAIN (AGRICULTURAL PRODUCT); LASER ABLATION; LIGHTNING; OPTICAL DESIGN; PHOTOACOUSTIC EFFECT; PHOTONICS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; ZINC ALLOYS;

(1 1 0) SURFACE; (OTDR) TECHNOLOGY; APPLIED (CO); CONTINUOUS WAVE TERAHERTZ (THZ) RADIATION; FEMTOSECOND LASER ABLATION; FIELD ENHANCEMENT; GRAIN SURFACES; LOCAL FIELD ENHANCEMENT; OPTICAL RECTIFICATION (OR); PLASMON EFFECTS; TERAHERTZ (THZ) EMISSIONS; TERAHERTZ (THZ) GENERATION; THZ EMISSIONS;

SURFACE PROPERTIES;

EID: 46349087284     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.923217     Document Type: Article

References (26)

1. Q. Wu, T. D. Hewitt, and X.-C. Zhang, "Two-dimensional electrooptic imaging of THz beams," Appl. Phys. Lett., vol. 69, no. 8, pp. 1026-1028, Apr. 1996.
2. D. M. Mittleman, R. H. Jacobsen, and M. C. Nuss, "T-ray imaging," IEEE J. Sel. Top. Quantum Electron., vol. 2, no. 3, pp. 679-692, Sep. 1996.
3. P. Y. Han, M. Tani, M. Usami, S. Kono, R. Kersting, and X.-C. Zhang "A direct comparison between terahertz time-domain spectroscopy and far-infrared Fourier transform spectroscopy," J. Appl. Phys., vol. 89, no. 4, pp. 2357-2359, Feb. 2001.
4. J. L. Hughes, E. C. Camus, M. D. Fraser, C. Jagadish, and M. B. Johnston, "Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission," Phys. Rev. B, vol. 70, p. 235330.1-6, Dec. 2004.
5. J. B. Khurgin, "Optical rectification and terahertz emission in semiconductors excited above the band gap," J. Opt. Soc. Amer. B, vol. 11, no. 12, pp. 2492-2501, Dec. 1994.
6. P. N. Saeta, B. I. Greene, and S. L. Chuang, "Short terahertz pulses from semiconductor surfaces: The importance of bulk difference-frequency mixing," Appl. Phys. Lett., vol. 63, no. 25, pp. 3482-3484, Dec. 1993.
7. M. Reid, I. Cravetchi, and R. Fedosejevs, "Enhanced nonlinear optical response of InP (100) membranes," Phys. Rev. B, vol. 71, no. 8, pp. 81306-81309, Feb. 2005.
8. M. Reid, I. V. Cravetchi, and R. Fedosejevs, "Enhanced terahertz emission from porous InP (111) membranes," Appl. Phys. Lett., vol. 86, no. 2, pp. 21904-21906, Jan. 2005.
9. G. H. Welsh, N. T. Hunt, and K. Wynne, "Terhertz-pulse emission through laser excitation of surface plasmons in a mental grating," Phys. Rev. Lett., vol. 98, no. 2, pp. 26803-26806, Jan. 2007.
10. F. Kadlec, P. Kuzel, and J.-L. Coutaz, "Study of terahertz radiation generated by optical rectification on thin gold films," Opt. Lett. vol. 30, no. 11, pp. 1402-1404, Jun. 2005.
11. T. Q. Jia, H. X. Chen, M. Huang, F. L. Zhao, J. R. Qiu, R. X. Li, Z. Z. Xu, X. K. He, J. Zhang, and H. Kuroda, "Formation of nanogratings on the surface of a ZnSe crystal irradiated by femtosecond laser pulses," Phys. Rev. B, vol. 72, no. 12, pp. 125429-125432, Sep. 2005.
12. 2 crystals," Phys. Rev. B, vol. 73, no. 5, pp. 54105-54113, Feb. 2006.
13. X. J. Wu, X. S. Chen, F. L. Zhao, T. Q. Jia, and G. Wang, "Terahertz radiation mechanisms in ZnSe at Femtosecond Laser Pulse Excitation," Jpn. J. Appl. Phys., vol. 46, no. 4A, pp. 1497-1500, Aug. 2007.
14. X.-C. Zhang and D. H. Auston, "Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics," J. Appl. Phys., vol. 71, no. 1, pp. 326-338, Jan. 1992.
15. T. Dekorsy, H. Auer, H. J. Baker, H. G. Roskos, and H. Hurz, "THz electromagnetic emission by coherent infrared-active phonons," Phys. Rev. B, vol. 53, no. 7, pp. 4005-4014, Feb. 1996.
16. A. A. Said, M. Sheik-Bahae, D. J. Hagan, T. H. Wei, J. Wang, J. Young, and E. W. Van Stryland, "Determination of bound- electronic and free-carriernonlinearities in ZnSe, GaAs, CdTe and ZnTe," J. Opt. Soc. Amer. B, vol. 9, no. 3, pp. 405-414, Mar. 1992.
17. S. L. Chuang, S. S. Rink, B. I. Greene, P. N. Saeta, and A. F. J. Levi, "Optical rectification at semiconductor surfaces," Phys. Rev. Lett. vol. 68, no. 1, pp. 102-105, Jul. 1992.
18. P. F. Liao and A. Wokaun, "Lightning rod effect in surface enhanced Raman scattering," J. Chem. Phys., vol. 76, no. 1, pp. 751-752, Jan. 1982.
19. J. Gersten and A. Nitzan, "Electromagnetic theory of enhanced Raman scattering by molecules adsorbed on rough surfaces," J. Chem. Phys. vol. 73, no. 7, pp. 3023-3037, Oct. 1980.
20. R. G. Olsen, "Integral equations for electrostatics problems with thin dielectric or conducting layers," IEEE Trans. Elec. Ins., vol. EI-21, no. 4, pp. 565-573, Aug. 1986.
21. J. Daffe and R. G. Olsen, "An integral equation technique for solving rotationally symmetric electrostatic problems in conducting and dielectric material," IEEE Trans. Power Appl. Syst., vol. PAS-98, no. 5, pp. 1609-1616, Oct. 1979.
22. A. Wokaun, J. P. Gordan, and P. F. Liao, "Radiation damping in surface-enhanced Raman scattering," Phys. Rev. Lett., vol. 48, no. 22, pp. 957-960, May 1982.
23. H. Shima, S. Funakawa, C. Kimura, and T. Sugino, "Electron emission from boron nitride films deposited on patterned GaAs substrates," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1084-1087, Jun. 2005.
24. K. Arya, "Electric field enhancement near a randomly rough metal surface: The effect of a dielectric overlayer," Phys. Rev. B, vol. 30, no. 12, pp. 7242-7249, Dec. 1984.
25. M. Nakajima, M. Hangyo, M. Ohta, and H. Miyazaki, "Polarity reversal of terahertz waves radiated from semi-insulating InP surfaces induced by temperature," Phys. Rev. B, vol. 67, no. 19, pp. 195308-195314, May 2003.
26. M. Nakajima, Y. Oda, and T. Suemoto, "Competing terahertz radiation mechanisms in semi-insulating InP at high-density excitation," Appl. Phys. Lett., vol. 85, no. 14, pp. 2694-2696, Oct. 2004.