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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2002, Pages 6231-6234

Spin polarization dependent far infrared absorption in Ga1-xMnxAs

(8) Nagai, Yasuyuki a Kunimoto, Takashi a Nagasaka, Keigo a Nojiri, Hiroyuki b Motokawa, Mitsuhiro b Matsukura, Fumihiro b Dietl, Tomasz c Ohno, Hideo b

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b TOHOKU UNIVERSITY (Japan)

c INSTITUTE OF PHYSICS (Poland)

Author keywords

Diluted magnetic semiconductor; Ferromagnetic Ga1 xMnxAs; Hopping conduction; IR and FIR spectra; Mn impurity state

Indexed keywords

DENSITY (OPTICAL); ELECTRON TRANSITIONS; ENERGY GAP; FERROMAGNETIC MATERIALS; HOLE MOBILITY; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; MAGNETIC FIELDS; MANGANESE; MATHEMATICAL MODELS; POLARIZATION; TEMPERATURE;

BAND GAP; DRUDE MODEL; INFRARED AND FAR INFRARED TRANSMISSION SPECTRA; OPTICAL CONDUCTIVITY; SPIN POLARIZATION DEPENDENT FAR INFRARED ABSORPTION; VALENCE BAND TRANSITIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036146046 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (45)

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