Encapsulation of 2-3-nm-sized ZnO quantum dots in a SiO 2 matrix and observation of negative photoconductivity

ACS Applied Materials and Interfaces

Volumn 1, Issue 10, 2009, Pages 2408-2411

  Panigrahi, Shrabani ^a   Bera, Ashok ^a   Basak, Durga ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

composite; photoconductivity; quantum dots; ZnO

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CHARGE TRAP; COMPOSITE; EXPONENTIAL DECAYS; INTERFACE DEFECTS; MATRIX; PHOTOCURRENT TRANSIENTS; PHOTOEXCITED ELECTRONS; QUANTUM DOT; QUANTUM DOTS; TETRA-ETHYL-ORTHO-SILICATE; TRAPPED CHARGE; ULTRAVIOLET ILLUMINATION; UV ILLUMINATIONS; ZNO; ZNO NANOPARTICLES; ZNO QUANTUM DOTS;

NANOPARTICLES; PHOTOCONDUCTIVITY; POWER QUALITY; SILICON COMPOUNDS; STRUCTURE (COMPOSITION); ZINC OXIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77958471010     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am9005513     Document Type: Article

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