Negative photoconductivity in In0.52Al0.48As/In0.7Ga0.3As heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 5, 2008, Pages 1341-1343

  Akazaki, Tatsushi ^a,b   Yamaguchi, Masumi ^a   Tsumura, Kouhei ^c   Nomura, Shintaro ^a,b,c   Takayanagi, Hideaki ^b,d  

^a Bio Medical Informatics Research Center   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Deep level; InAlAs InGaAs heterostructure; Infrared laser; Negative photoconductivity

Indexed keywords

HALL EFFECT; INDIUM ARSENIDE; INFRARED DEVICES; PHOTOCONDUCTIVITY; SEMICONDUCTOR LASERS; SHUBNIKOV-DE HAAS EFFECT;

DEEP LEVEL; INFRARED LASER; NEGATIVE PHOTOCONDUCTIVITY;

HETEROJUNCTIONS;

EID: 39649121470     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.09.004     Document Type: Article

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