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Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

Growth kinetics and compositional analysis of silicon rich a-SiN x:H film: A soft x-ray reflectivity study

(3) Singh, Sarab Preet a Modi, Mohammed H b Srivastava, P a

a INDIAN INSTITUTE OF TECHNOLOGY DELHI (India)

b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; COMPOSITIONAL ANALYSIS; ENERGY REGIONS; FILM COMPOSITION; INTERFACIAL LAYER; NON DESTRUCTIVE; OPTICAL DENSITIES; OPTICAL INDICES; PHOTON ENERGY; PRECISE ANALYSIS; QUALITATIVE ESTIMATION; SILICON NITRIDE FILM; SILICON NITRIDE THIN FILMS; SILICON RICH; SOFT-X-RAY REFLECTIVITY;

DEPOSITION; FILM GROWTH; GROWTH KINETICS; MERCURY (METAL); MULTILAYERS; REFLECTION; SILICON; SILICON NITRIDE; X RAYS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77958112564 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3497284 Document Type: Article

Times cited : (21)

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