On the role of chlorine in selective silicon epitaxy by chemical vapor deposition

Journal of the Electrochemical Society

Volumn 143, Issue 10, 1996, Pages 3290-3296

  Violette, K E ^a   O'Neil, P A ^a   Ozturk M C ^a   Christensen, K ^a   Maher, D M ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHEMICAL VAPOR DEPOSITION; CHLORINE; EPITAXIAL GROWTH; ETCHING; FLOW OF FLUIDS; HYDROGEN; THERMAL EFFECTS;

CHLOROSILANES; PARTIAL PRESSURE; SELECTIVE SILICON EPITAXY; THERMAL ETCHING; THERMODYNAMIC EQUILIBRIUM CALCULATIONS; UHV CHEMICAL VAPOR DEPOSITION;

SILICON;

EID: 0030263762     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837200     Document Type: Article

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