High speed and highly cost effective 72M bit density S3 SRAM technology with doubly stacked Si layers, peripheral only CoSix layers and Tungsten shunt W/L scheme for standalone and embedded memory

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 82-83

  Jung, Soon Moon ^a   Lim, Hoon ^a   Yeo, Chadong ^a   Kwak, Kunho ^a   Son, Byoungkeun ^a   Park, Hanbyung ^a   Na, Jonghoon ^a   Shim, Jae Joo ^a   Hong, Changmin ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47249132839     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339736     Document Type: Conference Paper

References (1)

1. Soon-Moon Jung et al, Symp. VLSI Tech., pp. 220, 2005.