Ge implantation to improve crystallinity and productivity for solid phase epitaxy prepared by atomic mass unit cross contamination-free technique

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 42-45, 2006, Pages

  Lee, Kong Soo ^a   Yoo, Dae Han ^a   Han, Jae Jong ^a   Son, Gil Hwan ^a   Lee, Chang Hun ^a   Noh, Ju Hee ^a   Kim, Seok Jae ^a   Kim, Yong Kwon ^a   You, Young Sub ^a   Hyung, Yong Woo ^a   Lee, Hyeon Deok ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

AMU contamination; Enriched 72Ge; Pre amorphization implantation (PAI); Ribbon like wide beam; Solid phase epitaxy (SPE)

Indexed keywords

AMORPHIZATION; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; ION IMPLANTATION; LEAKAGE CURRENTS; MOS DEVICES;

AMU CONTAMINATION; CRYSTALLINITY; ELECTRON BACK-SCATTER DIFFRACTION (EBSD); PRE-AMORPHIZATION IMPLANTATION (PAI); RIBBON-LIKE WIDE BEAMS; SOLID PHASE EPITAXY (SPE);

SEMICONDUCTING GERMANIUM;

EID: 34548774575     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1193     Document Type: Article

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