Controlling macropore formation in patterned n-type silicon: Existence of a pitch-dependent etching current density lower bound

Electrochemistry Communications

Volumn 12, Issue 10, 2010, Pages 1314-1317

  Barillaro, G ^a   Strambini, L M ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Current burst; Electrochemical etching; Macroporous silicon; Silicon micromachining

Indexed keywords

CRITICAL VALUE; CURRENT BURSTS; DENSITY LOWER BOUND; HF-BASED ELECTROLYTES; MACRO POROUS SILICON; MACROPORE FORMATION; N TYPE SILICON; ORDERS OF MAGNITUDE; PATTERN PITCH; PORE ARRAYS; PORE DIAMETERS; PORE FORMATION; PORE GROWTH; SILICON MICROMACHINING; SILICON SUBSTRATES;

COMPOSITE MICROMECHANICS; CURRENT DENSITY; MICROMACHINING; POROUS SILICON; SUBSTRATES;

ELECTROCHEMICAL ETCHING;

EID: 77958055311     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2010.07.008     Document Type: Article

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