Role of rapid thermal annealing in the formation of crystalline SiGe nanoparticles

Surface and Coatings Technology

Volumn 203, Issue 17-18, 2009, Pages 2497-2500

  Joshi, Kapil U ^a   Kabiraj, D ^b   Narsale, A M ^a   Avasthi, D K ^b   Gundurao, T K ^c   Warang, T N ^a   Kothari, D C ^a  

^a UNIVERSITY OF MUMBAI   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Co sputtering; FTIR; GXRD; Nanoparticles; Rapid Thermal Annealing (RTA); UV visible NIR

Indexed keywords

ABSORPTION EDGES; ANNEALING TEMPERATURES; ATOM BEAMS; AVERAGE SIZES; BLUE SHIFTS; CO-SPUTTERED FILMS; CO-SPUTTERING; FT-IR SPECTRUM; FTIR; GAS AMBIENT; GXRD; MATRIXES; RAMAN MEASUREMENTS; RAMAN SPECTRUM; SPUTTERING METHODS; UV-VIS ABSORPTIONS; UV-VIS SPECTRUM; UV-VISIBLE-NIR;

CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAS ABSORPTION; GAS PERMEABLE MEMBRANES; GERMANIUM; INFRARED DEVICES; NANOPARTICLES; PHASE SEPARATION; RAPID THERMAL PROCESSING; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; SILICON COMPOUNDS; SODIUM COMPOUNDS;

RAPID THERMAL ANNEALING;

EID: 67349177177     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2009.02.046     Document Type: Article

References (14)

1. Kartopu G., Bayliss S.C., Ekinci Y., Parker E.H.C., and Naylor T. Phys. Stat. Sol. (a) 197 1 (2003) 263-268
2. Kolobov A., Oyanagi H., Usami N., Toknmitsu S., Hattori T., Yamasaki S., Tanaka K., Ohtake S., and Shiraki Y. Appl. Phys. Lett. 80 (2002) 488
3. Rodríguez A., Ortiz M.I., Sangrador J., Rodríguez T., Avella M., Prieto A.C., Torres A., Jiménez J., Kling A., and Ballestreros C. Nanotechnology 18 (2007) 065702
4. Hu H., Peng C.J., and Krupanidhi S.B. Thin Solid Films 223 (1993) 327
5. Kabiraj D., Abhilash S.R., Vanmarcke L., Ciausero N., Pivin J.C., and Avasthi D.K. Nucl. Instrum. Methods B 244 (2006) 100-104
6. Belekar M.M., Narsale A.M., Sukhatankar K.V., Arora B.M., and Ali Y.P. Indian J. Pure Appl. Phys. 40 (2002) 543
7. A. Kosarev et al. JMR-2004-0903 accepted in Journal of the Materials Research Society).
8. C.W. Lin, S.Y. Lin, S.C. Lee, C.T. Chia, J. Appl. Phys. 91, 4, 2322.
9. Dismukes J.P., Ekstrom L., and Paff R.J. J. Phys. Chem. 68 (1964) 3021
10. Choi W.K., Teh L.K., Bera L.K., Chim W.K., Wee A.T.S., and Jie Y.X. J. Appl. Phys. 91 (1994) 444
11. Fujji M., Hayashi S., and Yamamoto. Jpn. J. Appl. Phys., Part 1 30 (1991) 687
12. Ortiz M.I., Rodriguze A., Sangrador J., Rodríguez T., Avella M., Jiménez J., and Ballestreros C. Nanotechnology 16 (2005) 8197
13. Choi W.K., Ng V., Ng S.P., Thio H.H., Shen Z.X., and Li W.S. J. Appl. Phys. 86 3 (1999) 13
14. C. Claeys, E. Simoen, Radiation effects in advanced semiconductor materials and devices (springer) [ISSN0933-33X] [ISBN-3-540-43393-7].