Effluent stream monitoring of an Al 2O 3 atomic layer deposition process using optical emission spectroscopy

AIP Conference Proceedings

Volumn 788, Issue , 2005, Pages 187-190

  Loo, John P ^a  

^a Samsung Austin Semiconductor   (United States)

Author keywords

A1 2O 3 Process Wavelength Determination; Atomic Layer Deposition; Effluent Stream Monitoring; Optical Emission Spectroscopy; Process Fault Detection

Indexed keywords

EID: 33749670705     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2062961     Document Type: Conference Paper

References (4)

1. Hand, A., "Industry Begins to Embrace ALD" in Semiconductor International, May 1,2003, pp. 1-5.
2. Seidel, T. et al., "Progress and Opportunities in Atomic Layer Deposition" in Solid State Technology, May 2003, pp. 1-5.
3. Braun, A., "Metrology Develops to Measure Thinner Films Better" in Semiconductor International, Oct. 1, 2004, p. 5.
4. Herman, I.P., Annu. Rev. Phys. Chem. 2003, 54, pp.227-305.