A phenomenological model of oxygen ion transport for metal oxide resistive switching memory

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Yu, Shimeng ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL DATA; FAST SWITCHING; HIGH ELECTRIC FIELDS; INTERFACE PROPERTY; INTERFACIAL BARRIERS; ION TRANSPORTS; IONIC TRANSPORTS; METAL OXIDES; MODEL VERIFICATION; NON-LINEAR; NON-LINEARITY; NUMERICAL SIMULATION; OXYGEN IONS; PHENOMENOLOGICAL MODELS; RESISTANCE SWITCHING; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORIES; SWITCHING BEHAVIORS; SWITCHING MODES;

COMPUTER SIMULATION; ELECTRIC FIELDS; METALLIC COMPOUNDS; OXYGEN; SWITCHING SYSTEMS;

SWITCHING;

EID: 77957910253     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488321     Document Type: Conference Paper

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