Reliability study of bilayer graphene - Material for future transistor and interconnect

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 80-83

  Yu, Tianhua ^a   Lee, Eun Kyu ^a   Briggs, Benjamin ^a   Nagabhirava, Bhaskar ^a   Yu, Bin ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Bilayer graphene; Breakdown; Contact; Current annealing; Interconnect

Indexed keywords

BILAYER GRAPHENE; BREAKDOWN; CONTACT; CURRENT ANNEALING; INTERCONNECT;

ENERGY GAP; MONOLAYERS; RELIABILITY;

GRAPHENE;

EID: 77957898061     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488851     Document Type: Conference Paper

References (17)

1. J. Brooks, "Characterization of graphene-based interconnects," in NNIN REU Research Accomplishments, 2008, pp.128-129.
2. Y. Hou and C. Tan, "Size effect in Cu nano-interconnects and its implication on electromigration", in 2nd IEEE International Nanoelectronics Conference, 2008, pp.610-613.
3. N. Michael, C. Kim, P. Gillespie, and R. Augur, "Electromigration failure in ultra-fine copper interconnects", J. Electron. Mater. vol.32, no.10, pp. 988-993, 2003.
4. P. Wang and R. G. Filippi, "Electromigration threshold in copper interconnects," Appl. Phys. Lett., vol. 78, pp. 3578-3581, Jun. 2001.
5. P. G. Collins, M. Hersam, M. Arnold, R. Martle, and Ph. Avouris, "Current saturation and electrical breakdown in multiwalled carbon nanotubes," Phys. Rev. Lett., vol. 86, no. 14, pp. 3128-3131, Apr. 2001.
6. M. Suzuki, Y. Ominami, Q. Ngo, and C. Y. Yang, "Current-induced breakdown of carbon nanofibers," J. Appl. Phys., vol. 101, no.11, pp. 114307, June 2007.
7. R. Murali, Y. Yang, K. Brenner, T. Beck, and J. D. Meindl, "Breakdown current density of graphene nanoribbons," Appl. Phys. Lett., vol. 94, no. 24, pp. 3114-3117, June 2009.
8. Yuji Awano, "Graphene for VLSI: FET and Interconnect Applications," IEDM Tech. Dig., pp. 233-236, Dec. 2009.
9. X. Du, I. Skachko, A. Barker, and E. Y. Andrei, "Approaching ballistic transport in suspended graphene," Nat. Nano., vol. 3, no. 8, pp. 491-495, Aug. 2008.
10. A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. N. Lau, "Superior thermal conductivity of single-layer graphene," Nano Lett., vol. 8, no. 3, pp. 902-907, Feb. 2008.
11. A. Naeemi and J. D. Meindl, "Conductance modeling for grapheme nanoribbon (GNR) interconnects," IEEE Electron Dev. Lett., vol. 28, no. 5, pp. 428-431, May 2007.
12. Y. Zhang, T. Tang, C. Girit, Z. Hao, M. C. Martin, A. Zettl, M. F. Crommie, Y. R. Shen, and F. Wang, "Direct observation of a widely tunable bandgap in bilayer graphene," Nature, vol. 459, pp.820-823, June 2009.
13. A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, "Raman spectrum of graphene and graphene Layers," Phys. Rev. Lett., vol. 97, no. 18, pp.187401 Oct. 2006.
14. K. I. Bolotin, K. J. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim and H.L. Storme, "Ultrahigh electron mobility in suspended graphene," Solid State Comm., vol. 146, no. 9, pp. 351-355, 2008.
15. T. Wehling, K. Novoselov, S. Morozov, E. Vdovin, M. Katsnelson, A. Geim, and A. Lichtenstein, "Molecular Doping of Graphene", Nano Lett., vol.8, no.1 pp.173-177, November 2008.
16. P. Ho, K Lee, S. Yoon, X. Lu and E. Ogawa, "Effect of low k dielectrics on electromigration reliability for Cu interconnects," Mater. Sci. Semicond. Process. vol. 7, pp.157-163, August 2004.
17. C. Basaran, and M. Lin, "Damage mechanics of electromigration induced failure", Mech. Mater. vol.40, pp.66-79, 2008.