Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Volumn , Issue , 2007, Pages 61-62

  Lin, Y Y ^a   Lv, H B ^a   Zhou, P ^d   Yin, M ^a   Liao, F F ^a   Cai, Y F ^a   Tang, T A ^a   Feng, J ^b   Zhang, Y ^b   Zhang, Z F ^b   Qiao, B W ^b   Lai, Y F ^b   Cai, B C ^b   Chen, B ^c  

^a FUDAN UNIVERSITY   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

^d NONE

Author keywords

Phase change memroy; Reset current, self confine; Self heat; SST; Thermal stability

Indexed keywords

AMORPHOUS FILMS; ATMOSPHERIC TEMPERATURE; CRYSTALLINE MATERIALS; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; PHASE STABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE; SILICON; SUBMARINE GEOPHYSICS; TELLURIUM;

DATA-RETENTION; HEAT MECHANISMS; NANO CRYSTALLINE; NON-VOLATILE; NON-VOLATILE MEMORY (NVM); PHASE CHANGES; RESET CURRENTS; SEMICONDUCTOR MEMORIES; THERMAL STABILITY;

PHASE CHANGE MEMORY;

EID: 48649097374     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2007.4290581     Document Type: Conference Paper

References (5)

1. S. Lai, IEDM. Tech Dig., 2003, pp. 10.1.1
2. H. Horii et al. VLSI Tech. Dig, 2003., pp. 175
3. N. Matsuzaki et al., IEDM Tech. Dig., 2005, pp. 758.
4. Y. Matsui et al., IEDM Tech Dig, 2006, pp. 30.1
5. F. Pellizzer, et al, F. Ottogalli, Symposium on VLSI Technology Digest of Technical Papers, 2004