Growth of graphene films by plasma enhanced chemical vapour deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7399, Issue , 2009, Pages

  Baraton, Laurent ^a   Gangloff, Laurent ^d   Xavier, Stéphane ^d   Cojocaru, Costel Sorin ^a   Hue, Vincent ^c   Legagneux, Pierre ^d   Lee, Young Hee ^b   Pribatta, Didier ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITÉ PARIS SUD   (France)

^d THALES   (France)

Author keywords

AFM; Graphene; Growth mechanism; PE CVD; Raman; SEM

Indexed keywords

2-D CRYSTALS; AFM; CLASSICAL METHODS; GRAPHENE GROWTH; GRAPHENES; GROWTH PROCESS; INTRINSIC PROPERTY; LOW COSTS; NICKEL FILM; NICKEL THIN FILM; OXIDIZED SILICON WAFERS; PHOTOVOLTAICS; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; QUANTUM PHENOMENA; SCALABLE SYNTHESIS; SEM; SPINTRONICS;

ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; GRAPHITE; INDUSTRIAL APPLICATIONS; NICKEL ALLOYS; PLASMA DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 70449674879     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.828747     Document Type: Conference Paper

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