Isothermal crystallization kinetic of ZnO thin films

Journal of Crystal Growth

Volumn 312, Issue 22, 2010, Pages 3282-3286

  Bouhssira, N ^a   Aida, M S ^a   Mosbah, A A ^a,b   Cellier, J J ^c  

^a Universite Mentouri Constantine   (Algeria)

^b FERHAT ABBAS UNIVERSITY   (Algeria)

^c UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

A1. Recrystallization; A1. Thermal annealing; A1. ZnO; A3. Grain growth

Indexed keywords

A3. GRAIN GROWTH; ANNEALING TEMPERATURES; ANNEALING TIME; DC MAGNETRON SPUTTERING; GRAIN SIZE; GROWTH MECHANISMS; ISOTHERMAL CRYSTALLIZATION KINETICS; LOW-ACTIVATION ENERGY; N VALUE; NITROGEN ATMOSPHERES; PARABOLIC LAW; RECRYSTALLIZATIONS; THERMAL-ANNEALING; XRD PATTERNS; ZNO; ZNO THIN FILM;

ACTIVATION ENERGY; ANNEALING; ATMOSPHERIC TEMPERATURE; CRYSTALLIZATION KINETICS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; OXIDE FILMS; RECRYSTALLIZATION (METALLURGY); THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

GRAIN GROWTH;

EID: 77957846630     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.08.021     Document Type: Article

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