Improved characterization methology for MOSFETs up to 220 GHz

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 5, 2009, Pages 1237-1243

  Waldhoff, Nicolas ^a   Andrei, Cristian ^a   Gloria, Daniel ^b   Lepilliet, Sylvie ^a   Danneville, François ^a   Dambrine, Gilles ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Calibration; Circuit modeling; Deembedding; Millimeter wave measurement; MOSFET; S parameters; Small signal model

Indexed keywords

CIRCUIT MODELING; DEEMBEDDING; MILLIMETER-WAVE MEASUREMENT; MOSFET; S-PARAMETERS; SMALL-SIGNAL MODEL;

CALIBRATION; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK ANALYZERS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MOSFET DEVICES; SCATTERING PARAMETERS; SIMULATORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 67649292800     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2017359     Document Type: Article

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