A wideband power amplifier MMIC utilizing GaN on SiC HEMT technology

IEEE Journal of Solid-State Circuits

Volumn 44, Issue 10, 2009, Pages 2640-2647

  Campbell, Charles ^a   Lee, Cathy ^a   Williams, Victoria ^a   Kao, Ming Yih ^a   Tserng, Hua Quen ^a   Saunier, Paul ^a   Balisteri, Tony ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Distributed amplifier; Gallium nitride (GaN); MMIC; Power amplifier

Indexed keywords

DISTRIBUTED AMPLIFIER; ELECTRONIC WARFARE SYSTEMS; FIELD PLATES; MMIC; PEAK POWER; POWER SUPPLY; PROCESS FLOWS; SATURATED OUTPUT POWER; SIC DEVICES; SMALL SIGNAL GAIN; WIDE BANDWIDTH; WIDEBAND POWER AMPLIFIER;

BANDWIDTH; ELECTRONIC WARFARE; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE CIRCUITS; MILITARY APPLICATIONS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTICAL INTERCONNECTS; PLATE METAL; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SILICON CARBIDE;

BROADBAND AMPLIFIERS;

EID: 70350594042     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2009.2026824     Document Type: Article

References (6)

1. D. E. Meharry, R. J. Lender, K. Chu, L. L. Gunter, and K. E. Beech, "Multi-watt wideband MMICS in GaN and GaAs," in IEEE MTT-S Int. Microw. Symp. Dig., 2007, pp. 631-634.
2. J. Gassmann, P. Watson, L. Kehias, and G. Henry, "Wideband, highefficiency GaN power amplifiers utilizing a non-uniform distributed topology," in IEEE MTT-S Int. Microw. Symp. Dig., 2007, pp. 615-618.
3. G. D. Vendelin, A. M. Pavio, and U. L. Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques. New York: Wiley, 2005.
4. C. Duperrier,M. Campovecchio, L. Roussel, M. Lajugie, and R. Quere, "New design method of uniform and nonuniform distributed power amplifiers," IEEE Trans. Microw. Theory Tech., vol.49, no.12, pp. 2494-2500, Dec. 2001.
5. C. F. Campbell, C. Lee, V. Williams, M. Y. Kao, H. Q. Tserng, and P. Saunier, "A wideband power amplifier MMIC utilizing GaN on SiC HEMT technology," in Proc. Compound Semiconductor Integrated Circuits Symp. (CSICS), 2008, pp. 159-162.
6. M. Y. Kao, C. Lee, R. Hajji, P. Saunier, and H. Q. Tserng, "AlGaN/GaN HEMTs with PAE of 53% at 35 GHz," in IEEE MTT-S Int. Microw. Symp. Dig., 2007, pp. 627-629.