Galvanically coupled gold/siliconon-insulator microstructures in hydrofluoric acid electrolytes: Finite element simulation and morphological analysis of electrochemical corrosion

Journal of Micromechanics and Microengineering

Volumn 20, Issue 8, 2010, Pages

  Becker, C R ^a   Miller, D C ^a   Stoldt, C R ^a  

^a University of Colorado at Boulder   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT CONCENTRATIONS; DYNAMIC SIMS; ELECTRICAL CONDUCTION; ELECTROCHEMICAL KINETICS; ELECTROCHEMICAL MEASUREMENTS; ETCH RATES; FINITE ELEMENT SIMULATIONS; FINITE SURFACE; FOCUSED ION BEAM MILLING; GALVANIC CORROSION; GALVANIC COUPLES; GALVANIC METHODS; HF SOLUTIONS; MECHANICAL AND ELECTRICAL PROPERTIES; MICRO-SCALES; MORPHOLOGICAL ANALYSIS; OVERLAYERS; POST PROCESSING; SILICON-ON-INSULATOR DEVICES; TAFEL EQUATION;

COMPUTER SIMULATION; COUPLED CIRCUITS; ELECTRIC PROPERTIES; ELECTROCHEMICAL CORROSION; ELECTROCHEMICAL PROPERTIES; FIBER OPTIC SENSORS; FINITE ELEMENT METHOD; MECHANICAL PROPERTIES; MICROSYSTEMS; POROUS SILICON; SEMICONDUCTOR DOPING; SURFACE ACTIVE AGENTS;

HYDROFLUORIC ACID;

EID: 77957808664     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/8/085017     Document Type: Article

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