New porous silicon formation technology using internal current generation with galvanic elements

Sensors and Actuators, A: Physical

Volumn 92, Issue 1-3, 2001, Pages 394-399

  Splinter, Alexandra ^a   Stürmann, Jörg ^a   Benecke, Wolfgang ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Electrochemical cell; Galvanic element; Internal current; Porous silicon

Indexed keywords

ANODIC OXIDATION; ELECTROCHEMISTRY; ELECTROLUMINESCENCE; ETCHING; HYDROFLUORIC ACID; PHOTOLUMINESCENCE; POROUS SILICON; SILICON WAFERS; ULTRAVIOLET RADIATION;

ELECTROCHEMICAL CELL; INTERNAL CURRENT GENERATION; NITRIDE ACID; POROUS SILICON FORMATION TECHNOLOGY; STAIN ETCH;

MICROELECTRONIC PROCESSING;

EID: 0035426182     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00578-7     Document Type: Article

References (7)

1. Porous silicon formation mechanisms
2. Properties of porous silicon
3. A porous Si dew point and humidity monitoring instrument
4. Thick porous silicon layers as sacrificial material for low power gas sensors
5. Stain films on silicon
6. Galvanic porous silicon formation without external contacts
7. Effect of crystallographic directions on porous silicon formation on patterned substrates