Characteristics of ZnO:Zn phosphor thin films by post-deposition annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 169, Issue 1-4, 2000, Pages 59-63

  Li, Wei ^a   Mao, Dongsheng ^a   Zhang, Fumin ^a   Wang, Xi ^a   Liu, Xianghuai ^a   Zou, Shichang ^a   Zhu, Yukun ^b   Li, Qiong ^b   Xu, Jingfang ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

Annealing; Phosphor thin films; Photoluminescence; Zno:zn

Indexed keywords

EID: 0033705912     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00017-3     Document Type: Article

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